K6R1016C1 Samsung semiconductor, K6R1016C1 Datasheet - Page 4

• Manufacturer Part Number: K6R1016C1
• Description: 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
• Manufacturer: Samsung semiconductor

PIN CONFIGURATION(TOP VIEW)
K6R1016V1D
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
RECOMMENDED DC OPERATING CONDITIONS
(1) V
(2) V
Voltage on Any Pin Relative to V
Voltage on V
Power Dissipation
Storage Temperature
Operating Temperature
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
IH
IL
(Min) = -2.0V a.c(Pulse Width
(Max) = V
I/O
I/O
I/O
I/O
I/O
I/O
I/O
I/O
Vcc
Vss
N.C
WE
CS
A
A
A
A
A
A
A
A
A
0
1
2
3
4
1
2
3
4
5
6
7
8
5
6
7
8
Parameter
10
11
12
13
14
15
16
17
18
19
20
21
22
1
2
3
4
5
6
7
8
9
CC +
CC
Supply Relative to V
2.0V a.c(Pulse Width
Parameter
TSOP2
SOJ/
Commercial
Industrial
8ns) for I
SS
SS
8ns) for I
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
Symbol
V
V
V
V
20mA.
A
A
A
OE
UB
LB
I/O
I/O
I/O
I/O
Vss
Vcc
I/O
I/O
I/O
I/O
N.C
A
A
A
A
N.C
CC
SS
IH
IL
15
14
13
12
11
10
9
16
15
14
13
12
11
10
9
20mA
-0.3
Min
3.0
2.0
0
- 4 -
V
(2)
Symbol
IN
T
V
, V
P
T
T
STG
CC
A
A
d
OUT
(T
G
A
B
C
D
E
H
F
A
= 0 to 70 C)
I/O1
I/O2
I/O7
I/O8
Vss
Vcc
N.C
LB
1
Typ
3.3
0
-
-
I/O3
I/O4
I/O5
I/O6
N.C
OE
UB
A8
2
-0.5 to 4.6
-0.5 to 4.6
-65 to 150
-40 to 85
48-TBGA
Rating
0 to 70
1
N.C
N.C
A14
A12
A0
A3
A5
A9
3
V
CC
Max
3.6
0.8
+0.3
0
A15
A13
A10
N.C
A1
A4
A6
A7
4
CMOS SRAM
( Top View )
(1)
I/O11
I/O12
I/O13
I/O14
WE
A11
CS
A2
5
for AT&T
Unit
I/O10
I/O15
I/O16
W
Revision 3.0
V
V
N.C
I/O9
N.C
Vcc
Vss
C
C
C
6
Unit
June 2002
V
V
V
V