HYS64V16220GDL Infineon, HYS64V16220GDL Datasheet - Page 7

• Manufacturer Part Number: HYS64V16220GDL
• Description: 144 pin SO-DIMM SDRAM Modules
• Manufacturer: Infineon

Operating Currents per memory bank
(Recommended Operating Conditions unless otherwise noted)
INFINEON Technologies
(T
OPERATING CURRENT
trc=trcmin., tck=tckmin.
Ouputs open, Burst Length = 4, CL=3
All banks operated in random access,
all banks operated in ping-pong manner
to maximize gapless data access
PRECHARGE STANDBY CURRENT in
Power Down Mode
CS =VIH (min.), CKE<=Vil(max)
PRECHARGE STANDBY CURRENT in
Non-Power Down Mode
CS = VIH (min.), CKE>=Vih(min)
NO OPERATING CURRENT
tck = min., CS = VIH(min),
active state ( max. 4 banks)
BURST OPERATING CURRENT
tck = min.,
Read command cycling
AUTO REFRESH CURRENT
tck = min.,
Auto Refresh command cycling
SELF REFRESH CURRENT
Self Refresh Mode, CKE=0.2V
Parameter & Test Condition
Notes:
1. These parameters depend on the cycle rate. These values are measured at 133 MHz for-7/ -7.5 and
2. These parameters are measured with continuous data stream during read access and all DQ toggling.
A
= 0 to 70
100 MHz for -8 modules. Input signals are changed once during tck, excepts for ICC6 and for standby
currents when tck=infinity.
CL=3 and BL=4 is assumed and the data-out current is excluded.
o
C, V
DD
= 3.3V
0.3V)
tck = min.
tck = Infinity
tck = min.
tck = Infinity
CKE>=VIH(min.)
CKE<=VIL(max.)
7
HYS64V8200GDL/HYS64V16220GDL
144 pin SO-DIMM SDRAM Modules
ICC2NS
ICC2PS
Symb.
ICC2P
ICC2N
ICC3N
ICC3P
ICC1
ICC4
ICC5
ICC6
-7/-7.5
600
160
200
600
720
3.2
20
40
6
4
560
140
180
560
680
3.2
20
40
-8
6
4
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1,2
1
1
1
1
1
1
1
1
1
9.01