GS82032 ETC, GS82032 Datasheet - Page 11
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GS82032
Manufacturer Part Number
GS82032
Description
64K x 32 2M Synchronous Burst SRAM
Manufacturer
ETC
Datasheet
1.GS82032.pdf
(23 pages)
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AC Test Conditions
Notes:
1.
2.
3.
4.
DC Electrical Characteristics
Rev: 1.09 7/2002
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Input high level
Input low level
Input slew rate
Input reference level
Output reference level
Output load
Input Leakage Current
(except mode pins)
ZZ Input Current
Mode Pin Input Current
Output Leakage Current
Output High Voltage
Output High Voltage
Output Low Voltage
Include scope and jig capacitance.
Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted.
Output Load 2 for t
Device is deselected as defined by the Truth Table.
Parameter
Parameter
LZ
DQ
, t
HZ
, t
OLZ
and t
Output Load 1
Symbol
OHZ
I
V
V
I
V
INZZ
I
INM
I
OL
OH
OH
IL
OL
VT = 1.25 V
Conditions
Fig. 1& 2
1 V/ns
1.25 V
1.25 V
0.2 V
2.3 V
50
I
I
OH
OH
* Distributed Test Jig Capacitance
= –4 mA, V
= –4 mA, V
11/23
Test Conditions
V
V
0V V
0V V
V
Output Disable,
V
DD
DD
OUT
30pF
IN
I
OL
= 0 to V
= 0 to V
= 4 mA
V
V
*
IN
IN
IN
IN
DDQ
DDQ
DD
V
V
= 2.375 V
= 3.135 V
V
V
DD
IH
IL
IH
IL
DQ
Output Load 2
–300 uA
–1 uA
–1 uA
–1 uA
–1 uA
–1 uA
1.7 V
2.4 V
Min
GS82032AT/Q-180/166/133/100
5pF
*
2.5 V
300 uA
© 2000, Giga Semiconductor, Inc.
Max
0.4 V
1 uA
1 uA
1 uA
1 uA
1 uA
225
225