HYS64D64020HBDL Infineon, HYS64D64020HBDL Datasheet - Page 18
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HYS64D64020HBDL
Manufacturer Part Number
HYS64D64020HBDL
Description
200-Pin Small Outline Dual-In-Line Memory Modules
Manufacturer
Infineon
Datasheet
1.HYS64D64020HBDL.pdf
(27 pages)
Table 12
Product Type
Symbol
I
I
I
I
I
I
I
I
I
I
I
I
1) Module
2) Test condition for maximum values:
3) The module
4) DQ I/O (
5) The module
Data Sheet
Organization
DD0
DD1
DD2P
DD2F
DD2Q
DD3P
DD3N
DD4R
DD4W
DD5
DD6
DD7
loading capacity.
m
modules
I
DDx
I
I
DD
[component] + n
DDQ
I
DD
values are calculated on the basis of component
I
I
) currents are not included in the calculations (see note 1)
DDx
DDx
Specification for HYS64D64020[G/H]BDL–6–C
values are calculated from the
values are calculated from the corrponent
I
DD3N
HYS64D64020GBDL–6-–C
HYS64D64020HBDL–6–C
512MB
2 Ranks
–6
Typ.
810
930
400
270
180
510
580
970
1010
300
16
1730
64
[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank
V
DD
= 2.7 V,
I
DDx
T
A
= 10 °C
values of the component data sheet as follows:
18
I
DDx
I
DD
Max.
960
1120
480
380
240
610
720
1160
1240
380
17.6
2080
data sheet values as: (m + n)
and can be measured differently according to DQ
Small Outline DDR SDRAM Modules
HYS64D64020[H/G]BDL–[5/6]–C
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Electrical Characteristics
I
DDx
Note
3)
3)4)
5)
5)
5)
5)
5)
3)4)
3)
3)
5)
3)4)
Rev. 1.1, 2004-05
[component]
1)2)