M470T6554CZ0 Samsung semiconductor, M470T6554CZ0 Datasheet - Page 8
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M470T6554CZ0
Manufacturer Part Number
M470T6554CZ0
Description
DDR2 Unbuffered SODIMM
Manufacturer
Samsung semiconductor
Datasheet
1.M470T6554CZ0.pdf
(20 pages)
256MB, 512MB, 1GB Unbuffered SODIMMs
Absolute Maximum DC Ratings
AC & DC Operating Conditions
Recommended DC Operating Conditions (SSTL - 1.8)
1.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please
1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is
2. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC).
3. VTT of transmitting device must track VREF of receiving device.
4. AC parameters are measured with VDD, VDDQ and VDDDL tied together.
V
Symbol
VDDQ
VDDL
Symbol
IN
VDDQ
VDD
T
Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
refer to JESD51-2 standard.
VDDL
VREF
There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must
be less than or equal to VDD.
expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
,
VDD
VTT
STG
V
OUT
Voltage on VDD pin relative to Vss
Voltage on VDDQ pin relative to Vss
Voltage on VDDL pin relative to Vss
Voltage on any pin relative to Vss
Storage Temperature
Supply Voltage
Supply Voltage for DLL
Supply Voltage for Output
Input Reference Voltage
Termination Voltage
Parameter
Parameter
0.49*VDDQ
V
REF
Min.
1.7
1.7
1.7
-0.04
0.50*VDDQ
Rating
V
Typ.
1.8
1.8
1.8
REF
- 1.0 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
-55 to +100
0.51*VDDQ
Rating
V
REF
Max.
1.9
1.9
1.9
+0.04
Units
mV
V
V
V
V
Units
Rev. 1.1 Mar. 2005
°C
V
V
V
V
DDR2 SDRAM
Notes
1,2
4
4
3
Notes
1, 2
1
1
1
1