M470T6554CZ0 Samsung semiconductor, M470T6554CZ0 Datasheet - Page 15

• Manufacturer Part Number: M470T6554CZ0
• Description: DDR2 Unbuffered SODIMM
• Manufacturer: Samsung semiconductor

256MB, 512MB, 1GB Unbuffered SODIMMs
Active to active
command period for
2KB page size
products
Four Activate Window
for 1KB page size
products
Four Activate Window
for 2KB page size
products
CAS to CAS command
delay
Write recovery time
Auto precharge write
recovery + precharge
time
Internal write to read
command delay
Internal read to
precharge command
delay
Exit self refresh to a
non-read command
Exit self refresh to a
read command
Exit precharge power
down to any non-read
command
Exit active power down
to read command
Exit active power down
to read command
(slow exit, lower
power)
CKE minimum pulse
width
(high and low pulse
width)
ODT turn-on delay
ODT turn-on
ODT turn-on(Power-
Down mode)
ODT turn-off delay
ODT turn-off
Parameter
Symbol
tRRD
tFAW
tFAW
tCCD
tWR
tDAL
tWTR
tRTP
tXSNR
tXSRD
tXP
tXARD
tXARDS
t
t
t
t
t
t
CKE
AOND
AON
AONPD
AOFD
AOF
WR+tR
tRFC +
tAC(mi
tAC(mi
tAC(mi
7 - AL
min
n)+2
37.5
200
7.5
2.5
10
50
7.5
10
15
n)
n)
P
2
3
2
DDR2-667
2
2
2tCK+t
AC(ma
tAC(m
ax)+0.
tAC(m
max
x)+1
ax)+
2.5
0.6
2
7
x
x
x
x
x
x
tAC(min)
WR+tR
tRFC +
tAC(mi
tAC(mi
6 - AL
min
n)+2
37.5
200
7.5
7.5
2.5
10
50
10
15
n)
P
3
DDR2-533
2
2
2
2
2tCK+t
AC(ma
tAC(ma
tAC(m
x)+ 0.6
ax)+1
max
x)+1
2.5
2
x
x
x
x
x
x
WR+tR
tRFC +
tAC(mi
tAC(mi
tAC(mi
6 - AL
min
n)+2
37.5
200
7.5
2.5
10
50
15
10
10
n)
n)
P
3
2
2
2
DDR2-400
2
tAC(ma
tAC(max
2tCK+t
(max)+
max
)+ 0.6
x)+1
AC
2.5
x
x
2
1
x
x
x
x
Units
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Rev. 1.1 Mar. 2005
DDR2 SDRAM