HYS64-72V2200GU-8 Siemens, HYS64-72V2200GU-8 Datasheet - Page 9

• Manufacturer Part Number: HYS64-72V2200GU-8
• Description: 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module
• Manufacturer: Siemens

Parameter
Refresh Cycle
Self Refresh Exit Time
Refresh Period (4096 cycles)
Read Cycle
Data Out Hold Time
Data Out to Low Impedance
Time
Data Out to High Impedance
Time
DQM Data Out Disable
Latency
Write Cycle
Data input to Precharge (write
recovery)
Data In to Active/refresh
DQM Write Mask Latency
Semiconductor Group
Symbol
t
t
t
t
t
t
t
t
t
SREX
REF
OH
LZ
HZ
DQZ
DPL
DAL
DQW
min. max. min. max. min. max.
10
64
3
0
3
2
2
5
0
PC100
2-2-2
-8
9
–
–
–
–
9
–
–
–
–
Limit Values
HYS64(72)V2200/4220GU-8/-10
10
64
3
0
3
2
2
5
0
PC100
3-2-3
-8-3
–
–
–
–
9
–
–
–
–
10
64
3
0
3
2
2
5
0
PC66
2-2-2
-10
SDRAM-Modules
–
–
–
–
9
–
–
–
–
ns
ms
ns
ns
ns
CLK
CLK
CLK
CLK
Unit
Note
9)
8)
4)
10)
11)