HYS64-72V2200GU-8 Siemens, HYS64-72V2200GU-8 Datasheet - Page 7

• Manufacturer Part Number: HYS64-72V2200GU-8
• Description: 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module
• Manufacturer: Siemens

Standby and Refresh Currents (T
Semiconductor Group
Operating Current
Burst Operating
Parameter
Precharged Standby
Current in Power
Down Mode
Precharged Standby
Current in Non-
power
Down Mode
Active Standby
Current in Power
Down Mode
Active Standby
Current in Non-
power Down Mode
Current
Auto (CBR) Refresh
Current
Self Refresh Current
Symbol
Icc2NS
Icc3NS
Icc2PS
Icc3PS
Icc2N
Icc3N
Icc2P
Icc3P
Icc1
Icc6
Icc4
Icc5
a
= 0 to 70
Burst length = 4, CL=3
trc>=trc(min.),
tck>=tck(min.), Io=0 mA
2 bank interleave operation
CKE<=VIL(max), tck>=tck(min.)
CKE<=VIL(max), tck=infinite
CKE>=VIH(min), tck>=tck (min.),
input changed once in 3 cycles
CKE>=VIH(min), tck=infinite,
no input change
CKE<=VIL(max), tck>=tck(min.)
CKE<=VIL(max), tck=infinite
CKE>=VIH(min), tck>=tck (min.)
input changed one time
CKE=>VIH(min),tck=infinite,
no input change
Burst length = full page,
trc = infinite, CL = 3,
tck>=tck (min.), Io = 0 mA
2 banks activated
trc>=trc(min)
CKE=<0,2V
Test Condition
o
C, VCC = 3.3V
7
HYS64(72)V2200/4220GU-8/-10
0.3V)
X64
800
160
200
120
760
720
24
16
80
24
16
16
1)
max.
SDRAM-Modules
X72
900
180
225
135
855
810
27
18
90
27
18
18
mA
mA
mA
mA CS=
mA
mA
mA
mA CS=
mA
mA
mA
mA
Note
High
High
1,2
1,2
1,2
1,2