M28256-12BS6T STMicroelectronics, M28256-12BS6T Datasheet - Page 8

• Manufacturer Part Number: M28256-12BS6T
• Description: 256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection
• Manufacturer: STMicroelectronics

M28256
Table 7. Power Up Timing for M28256
(T
Note: 1. Sampled only, not 100% tested.
Table 8. Read Mode DC Characteristics for M28256-W
(T
Note: 1. All I/O’s open circuit.
Table 9. Power Up Timing for M28256-W
(T
Note: 1. Sampled only, not 100% tested.
8/21
Symbol
A
A
I
A
I
CC2
CC
V
V
V
I
V
= 0 to 70 C or –40 to 85 C; V
= 0 to 70 C or –40 to 85 C; V
I
= 0 to 70 C or –40 to 85 C; V
LO
OH
Symbol
LI
OL
Symbol
IH
IL
(1)
(1)
t
t
t
t
V
V
PUW
PUW
PUR
PUR
WI
WI
Input Leakage Current
Output Leakage Current
Supply Current (CMOS inputs)
Supply Current (Standby) CMOS
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Time Delay to Read Operation
Time Delay to Write Operation (once V
Write Inhibit Threshold
Time Delay to Read Operation
Time Delay to Write Operation (once V
Write Inhibit Threshold
Parameter
CC
CC
CC
= 4.5V to 5.5V)
= 2.7V to 3.6V)
= 2.7V to 3.6V)
Parameter
Parameter
(1)
E = V
E = V
(1)
IL
IL
, G = V
, G = V
CC
CC
Test Condition
0V
0V
E > V
I
OH
I
OL
IL
IL
V
V
, f = 5 MHz, V
, f = 5 MHz, V
= –400 A
WI
= 2.1 mA
WI
V
V
CC
IN
IN
)
)
–0.3V
V
V
CC
CC
CC
CC
= 3.3V
= 3.6V
Min
Min
3.0
1.5
0.8 V
– 0.3
Min
2
CC
V
Max
Max
4.2
2.5
0.2 V
10
CC
5
1
1
Max
0.6
10
10
15
15
20
+ 0.5
CC
Unit
Unit
ms
ms
V
Unit
V
mA
mA
s
s
V
V
V
V
A
A
A