BS62UV1024DC Brilliance Semiconductor, BS62UV1024DC Datasheet - Page 6
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BS62UV1024DC
Manufacturer Part Number
BS62UV1024DC
Description
Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit
Manufacturer
Brilliance Semiconductor
Datasheet
1.BS62UV1024DC.pdf
(11 pages)
R0201-BS62UV1024
WRITE CYCLE1
WRITE CYCLE
AC ELECTRICAL CHARACTERISTICS
SWITCHING WAVEFORMS (WRITE CYCLE)
PARAMETER
ADDRESS
OE
CE1
CE2
WE
D
D
JEDEC
IN
t
t
t
t
t
t
t
t
t
t
t
t
OUT
NAME
BSI
AVAX
E1LWH
AVWL
AVWH
WLWH
WHAX
E2LAX
WLOZ
DVWH
WHDX
GHOZ
WHQX
(1)
PARAMETER
NAME
t
t
t
t
t
t
t
t
t
t
t
t
WC
CW
AS
AW
WP
WR1
WR2
WHZ
DW
DH
OHZ
OW
Write Cycle Time
Chip Select to End of Write
Address Set up Time
Address Valid to End of Write
Write Pulse Width
Write Recovery Time
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Disable to Output in High Z
End of Write to Output Active
t
(4,10)
AS
t
OHZ
( TA = 0
(5)
(5)
DESCRIPTION
t
AW
o
6
C to + 70
t
t
t
t
WC
CW
CW
WP
(11)
o
(11)
(2)
C, Vcc=2.0V )
(CE1 , WE)
t
(CE2)
DW
150
150
150
80
50
0
0
0
--
0
0
5
t
t
MIN. TYP. MAX.
t
BS62UV1024-15
WR2
WR1
DH
(3)
(3)
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BS62UV1024
40
40
--
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UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Revision 2.2
April 2001