BS62UV1024DC Brilliance Semiconductor, BS62UV1024DC Datasheet - Page 5
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BS62UV1024DC
Manufacturer Part Number
BS62UV1024DC
Description
Ultra Low Power/Voltage CMOS SRAM 128K X 8 bit
Manufacturer
Brilliance Semiconductor
Datasheet
1.BS62UV1024DC.pdf
(11 pages)
R0201-BS62UV1024
READ CYCLE1
READ CYCLE2
READ CYCLE3
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE1 = V
3. Address valid prior to or coincident with CE1 transition low and/or CE2 transition high.
4. OE = V
5. Transition is measured
SWITCHING WAVEFORMS (READ CYCLE)
The parameter is guaranteed but not 100% tested.
ADDRESS
D
BSI
CE1
CE2
D
ADDRESS
OE
CE1
CE2
D
OUT
IL
OUT
OUT
.
(1,2,4)
(1,3,4)
(1,4)
±
500mV from steady state with C
t
CLZ
t
(5)
IL
OH
t
t
and CE2= V
ACS1
ACS2
t
t
CLZ1
CLZ2
t
(5)
(5)
AA
t
t
ACS2
L
ACS1
5
t
= 5pF as shown in Figure 1B.
t
AA
IH.
OLZ
t
t
RC
t
OE
RC
t
BS62UV1024
CHZ1,
t
t
t
OHZ
CHZ1
CHZ2
(2,5)
(1,5)
t
t
(5)
t
(5)
OH
CHZ2
OH
Revision 2.2
April 2001