AS7C256A ETC, AS7C256A Datasheet - Page 3

• Manufacturer Part Number: AS7C256A
• Description: 5V/3.3V 32K X 8 CMOS SRAM (Common I/O)
• Manufacturer: ETC

Recommended operating conditions
*
DC operating characteristics (over the operating range)
Capacitance (f = 1MHz, T
Parameter
Parameter
Parameter
Supply voltage
Input voltage
Ambient operating temperature
Input leakage
current
Output leakage
current
Operating
power supply
current
Standby power
supply current
Output voltage
Data retention
current
Input capacitance
I/O capacitance
V
3/7/01; V.0.9.2
IL
min = –2.0V for pulse width less than t
Sym
I
I
I
V
V
I
I
I
CC
SB
SB1
CCDR
LI
LO
OL
OH
Test conditions
V
V
V
V
V
f = f
V
f = f
V
V
V
I
I
V
CE
V
0.2V
OL
OH
OUT
CC
in
CC
CC
CC
CC
IN
IN
CC
IN
> V
= GND to V
= 8 mA, V
< GND + 0.2V or
> V
= –4 mA, V
> V
= Max,
= Max,
= Max, CE V
= Max, CE V
= Max, CE V
= 2.0V
Max
Max
= GND to V
a
CC
, I
, I
CC
CC
= room temperature, V
-0.2V
OUT
OUT
–0.2V, f = 0
-0.2V or V
RC
/2.
Device
CC
= 0mA
= 0mA
AS7C3256A V
AS7C3256A V
commercial T
CC
CC
AS7C256A
AS7C256A
industrial
= Min
CC
IL
IL
CC
= Min
—
Symbol
C
C
–0.2V
Alliance Semiconductor
IN
IN
I/O
<
Device
Both
Both
AS7C256A
AS7C3256A
AS7C256A
AS7C3256A
AS7C256A
AS7C3256A
Both
Both
Both
Symbol
V
V
V
T
A
A
CC
CC
IH
IH
IL
*
Signals
A, CE, WE, OE
I/O
CC
= NOMINAL)
1
Min
®
Min
4.5
3.0
2.2
2.0
-0.5
0
–40
-10
Max Min Max
*
90
60
30
30
.5
2
1
2.4
2
Test conditions
V
V
–
–
–
–
–
–
–
–
–
in
in
-12
= 0V
= V
Typical
5.0
3.3
–
–
–
–
–
0.4
80
50
25
25
.5
1
1
2
1
–
out
= 0V
Min
2.4
–
–
–
–
–
–
–
–
–
-15
Max
Max
0.4
5.5
3.6
V
V
0.8
70
85
70
45
20
20
.5
1
1
2
1
–
Max
CC
CC
5
7
+0.5
+0.5
Min
2.4
AS7C3256A
–
–
–
–
–
–
–
–
–
AS7C256A
-20
P. 3 of 8
Max
5.0
2.0
0.4
70
45
20
20
1
1
–
1
Unit
Unit
V
V
V
V
V
o
o
pF
pF
C
C
Unit
mA
mA
mA
mA
µA
µA
V
V