ISPLSI1016E Lattice Semiconductor, ISPLSI1016E Datasheet - Page 3

• Manufacturer Part Number: ISPLSI1016E
• Description: In-System Programmable High Density PLD
• Manufacturer: Lattice Semiconductor

Supply Voltage V
Input Voltage Applied ........................ -2.5 to V
Off-State Output Voltage Applied ..... -2.5 to V
Storage Temperature ................................ -65 to 150 C
Case Temp. with Power Applied .............. -55 to 125 C
Max. Junction Temp. (T
1. Stresses above those listed under the “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
V
V
V
C
C
Absolute Maximum Ratings
SYMBOL
Data Retention
Erase/Reprogram Cycles
DC Recommended Operating Conditions
Capacitance (T
Data Retention Specifications
1
2
operation of the device at these or at any other conditions above those indicated in the operational sections of this specification
is not implied (while programming, follow the programming specifications).
CC
IL
IH
SYMBOL
Dedicated Input, I/O, Y1, Y2, Y3, Clock Capacitance
(Commercial/Industrial)
Y0 Clock Capacitance
CC
PARAMETER
Supply Voltage
Input Low Voltage
Input High Voltage
A
................................ -0.5 to +7.0V
=25
J
) with Power Applied ... 150 C
o
C, f=1.0 MHz)
PARAMETER
1
PARAMETER
CC
CC
+1.0V
+1.0V
Commercial
Industrial
MINIMUM
3
10000
20
Specifications ispLSI 1016E
T
T
A
A
= 0 C to + 70 C
= -40 C to + 85 C
TYPICAL
12
8
MAXIMUM
UNITS
–
–
pf
pf
MIN.
4.75
4.5
0
2.0
V = 5.0V, V
V = 5.0V, V
CC
CC
TEST CONDITIONS
V
MAX.
5.25
5.5
0.8
cc
UNITS
Cycles
+1
Years
PIN
PIN
Table 2-0006/1016E
Table 2-0005/1016E
Table 2-0008/1016E
= 2.0V
= 2.0V
UNITS
V
V
V
V