IRFR13N15D International Rectifier, IRFR13N15D Datasheet - Page 2

• Manufacturer Part Number: IRFR13N15D
• Description: (IRFR13N15D / IRFU13N15D) Power MOSFET
• Manufacturer: International Rectifier

Avalanche Characteristics
Thermal Resistance
Diode Characteristics
IRFR13N15D/IRFU13N15D
Dynamic @ T
Static @ T
E
I
E
R
R
R
V
R
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
AR
SM
DSS
GSS
d(on)
r
d(off)
f
S
rr
on
V
fs
AS
AR
2
SD
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
rr
g
gs
gd
JC
JA
JA
(BR)DSS
eff.
/ T
J
Breakdown Voltage Temp. Coefficient
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Drain-to-Source Leakage Current
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
5.0
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
0.17
–––
–––
–––
110
520
–––
––– 0.18
–––
–––
–––
–––
––– -100
–––
19
620
130
780
110
5.5
9.4
8.0
26
12
11
38
62
–––
–––
–––
–––
250
100
–––
29
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.3
5.5
8.2
25
14
14
56
V/°C
nC
µA
nA
nC
ns
ns
pF
V
V
V
S
Typ.
Typ.
A
–––
–––
–––
–––
–––
–––
I
D
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
V
V
V
MOSFET symbol
integral reverse
Reference to 25°C, I
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
= 8.3A
DS
GS
DD
G
GS
GS
DS
GS
GS
GS
= 8.3A
= 25°C, I
= 25°C, I
= 11
= V
= 150V, V
= 120V, V
= 50V, I
= 120V
= 25V
= 0V, I
= 10V, I
= 30V
= -30V
= 10V,
= 75V
= 10V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
Conditions
DS
DS
= 250µA
Conditions
Conditions
= 8.3A, V
= 8.3A
= 250µA
= 8.3A
= 8.3A
GS
GS
= 0V to 120V
Max.
Max.
1.75
= 1.0V, ƒ = 1.0MHz
= 120V, ƒ = 1.0MHz
130
110
8.3
8.6
50
= 0V, T
= 0V
www.irf.com
D
= 1mA
GS
J
G
= 0V
= 150°C
Units
Units
S
°C/W
+L
mJ
mJ
A
D
D
S
)