M27W064-110N1T STMicroelectronics, M27W064-110N1T Datasheet - Page 6

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M27W064-110N1T

Manufacturer Part Number
M27W064-110N1T
Description
64 Mbit 4Mb x16 3V Supply FlexibleROM Memory
Manufacturer
STMicroelectronics
Datasheet
M27W101
Table 8. Read Mode AC Characteristics
(T
Note: 1. V
Figure 5. Read Mode AC Waveforms
6/15
t
t
Symbol
GHQZ
EHQZ
A
t
t
t
t
GLQV
AXQX
AVQV
ELQV
= –40 to 85 C; V
2. Sampled only, not 100% tested.
3. Speed obtained with High Speed AC measurement conditions.
(2)
(2)
CC
Q0-Q7
A0-A16
E
G
must be applied simultaneously with or before V
t
t
Alt
ACC
t
t
t
t
OE
OH
CE
DF
DF
Address Valid to
Output Valid
Chip Enable Low to
Output Valid
Output Enable Low
to Output Valid
Chip Enable High
to Output Hi-Z
Output Enable High
to Output Hi-Z
Address Transition
to Output Transition
CC
Parameter
= 2.7V to 3.6V; V
tAVQV
tELQV
Condition
E = V
E = V
G = V
G = V
G = V
G = V
E = V
E = V
Test
tGLQV
VALID
PP
(1)
IL
IL
IL
IL
IL
IL
IL
IL
,
,
= V
PP
CC
V
CC
and removed simultaneously or after V
Min
)
0
0
0
= 3.0V to 3.6V V
Max
70
70
40
40
40
-80
(3)
tAXQX
CC
Min
0
0
0
M27W101
= 2.7V to 3.6V V
tEHQZ
tGHQZ
VALID
Max
80
80
50
50
50
PP
.
(-120/-150/-200)
CC
Min
0
0
0
= 2.7V to 3.6V
-100
AI00713B
Hi-Z
Max
100
100
60
60
60
Unit
ns
ns
ns
ns
ns
ns

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