CY62256V Cypress Semiconductor, CY62256V Datasheet - Page 4

• Manufacturer Part Number: CY62256V
• Description: 32K x 8 Static RAM
• Manufacturer: Cypress Semiconductor

Data Retention Characteristics
Data Retention Waveform
Switching Characteristics
V
I
t
t
READ CYCLE
t
t
t
t
t
t
t
t
t
t
t
Shaded area contains advanced information.
Notes:
CCDR
CDR
R
RC
AA
OHA
ACE
DOE
LZOE
HZOE
LZCE
HZCE
PU
PD
4.
5.
6.
7.
DR
[3]
Parameter
Parameter
[3]
No input may exceed V
Test conditions assume signal transition time of 5 ns or less timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
At any given temperature and voltage condition, t
t
OL
HZOE
/I
OH
V
CE
, t
CC
and 100-pF load capacitance.
HZCE
, and t
HZWE
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
CC
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE LOW to Data Valid
OE LOW to Data Valid
OE LOW to Low Z
OE HIGH to High Z
CE LOW to Low Z
CE HIGH to High Z
CE LOW to Power-Up
CE HIGH to Power-Down
are specified with C
CC
for Data Retention
+0.3V.
Description
Over the Operating Range
L
= 5 pF as in part (b) of AC Test Loads. Transition is measured 500 mV from steady-state voltage.
PRELIMINARY
[6]
[6]
Description
(Over the Operating Range)
[6, 7]
[6, 7]
t
CDR
HZCE
3.0V
L
LL
is less than t
LZCE
[5]
V
CE > V
V
V
DATA RETENTION MODE
, t
CC
IN
IN
HZOE
> V
< 0.3V
4
= V
is less than t
CC
CC
Conditions
DR
V
DR
- 0.3V,
- 0.3V or
= 3.0V,
> 2V
LZOE
Min.
CY62256V-55
, and t
55
3
3
3
0
[4]
HZWE
is less than t
Max.
55
55
25
20
20
55
Min.
2.0
t
RC
0
LZWE
3.0V
Min.
t
CY62256V-70
R
70
for any given device.
3
3
3
0
Max.
200
20
5
Max.
CY62256V
70
70
35
25
25
70
C62256V–7
Unit
Unit
ns
ns
V
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
A
A
A