AT28C010 ATMEL Corporation, AT28C010 Datasheet - Page 4

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AT28C010

Manufacturer Part Number
AT28C010
Description
1 Megabit 128K x 8 Paged CMOS E2PROM
Manufacturer
ATMEL Corporation
Datasheets

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Device Operation (Continued)
DEVICE IDENTIFICATION: A n e x t r a 1 2 8 - b y t e s o f
E
identification. By raising A9 to 12V
dress locations 1FF80H to 1FFFFH the bytes may be writ-
ten to or read from in the same manner as the regular
memory array.
DC and AC Operating Range
Operating Modes
Notes: 1. X can be V
DC Characteristics
2-246
2
Symbol
I
I
I
I
I
V
V
V
V
V
Operating
Temperature (Case)
V
LI
LO
SB1
SB2
CC
PROM memory are available to the user for device
Mode
Read
Write
Standby/Write Inhibit
Write Inhibit
Write Inhibit
Output Disable
IL
IH
OL
OH1
OH2
CC
Power Supply
2. Refer to AC Programming Waveforms.
(2)
Input Load Current
Output Leakage Current
V
V
V
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output High Voltage CMOS
Parameter
CC
CC
CC
Active Current
AT28C010 Mil
Standby Current CMOS
Standby Current TTL
IL
or V
IH
Mil.
.
0.5V and using ad-
AT28C010-12
-55°C - 125°C
V
CE
V
V
X
X
X
5V
IH
IL
IL
10%
Condition
V
V
CE = V
CE = 2.0V to V
f = 5 MHz; I
I
I
I
OL
OH
OH
IN
I/O
= 2.1 mA
= 0V to V
= -400 A
= -100 A; V
= 0V to V
CC
- 0.3V to V
OUT
CC
AT28C010-15
-55°C - 125°C
CC
CC
X
5V
= 0 mA
OE
V
V
OPTIONAL CHIP ERASE MODE: The entire device can
be erased using a 6-byte software code. Please see Soft-
ware Chip Erase application note for details.
V
V
+ 1V
CC
X
IL
IH
(1)
IL
IH
+ 1V
= 4.5V
10%
CC
+ 1V
AT28C010-20
-55°C - 125°C
Min
2.0
2.4
4.2
5V
WE
V
V
V
X
X
X
IH
IH
IL
10%
Max
300
0.8
.45
10
10
80
3
I/O
D
D
High Z
High Z
AT28C010-25
-55°C - 125°C
OUT
IN
5V
10%
Units
mA
mA
V
V
V
V
V
A
A
A

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