AT28C010 ATMEL Corporation, AT28C010 Datasheet
AT28C010
Manufacturer Part Number
AT28C010
Description
1 Megabit 128K x 8 Paged CMOS E2PROM
Manufacturer
ATMEL Corporation
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1. Description
The AT28C010 is a high-performance electrically-erasable and programmable read-
only memory. Its 1 megabit of memory is organized as 131,072 words by 8 bits. Man-
ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 120 ns with power dissipation of just 220 mW. When the device is
deselected, the CMOS standby current is less than 200 µA.
The AT28C010 is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 128-byte page register to allow
writing of up to 128 bytes simultaneously. During a write cycle, the address and 1 to
128 bytes of data are internally latched, freeing the address and data bus for other
operations. Following the initiation of a write cycle, the device will automatically write
the latched data using an internal control timer. The end of a write cycle can be
detected by DATA polling of I/O7. Once the end of a write cycle has been detected a
new access for a read or write can begin.
Atmel’s AT28C010 has additional features to ensure high quality and manufacturabil-
ity. The device utilizes internal error correction for extended endurance and improved
data retention characteristics. An optional software data protection mechanism is
available to guard against inadvertent writes. The device also includes an extra
128 bytes of EEPROM for device identification or tracking.
Fast Read Access Time – 120 ns
Automatic Page Write Operation
Fast Write Cycle Time
Low Power Dissipation
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option
– Internal Address and Data Latches for 128 Bytes
– Internal Control Timer
– Page Write Cycle Time – 10 ms Maximum
– 1 to 128-byte Page Write Operation
– 40 mA Active Current
– 200 µA CMOS Standby Current
– Endurance: 10
– Data Retention: 10 Years
4
or 10
5
Cycles
1-megabit
(128K x 8)
Paged Parallel
EEPROM
AT28C010
0353G–PEEPR–10/06
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