LP2997MX National Semiconductor, LP2997MX Datasheet - Page 3

• Manufacturer Part Number: LP2997MX
• Description: DDR-II Termination Regulator
• Manufacturer: National Semiconductor

V
Z
V
Vos
I
Z
I
I
V
V
I
T
T
Q
SD
Q_SD
SENSE
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
type apply over the full Operating Temperature Range (T
AVIN = 2.5V, PVIN = 1.8V, VDDQ = 1.8V.
REF
VREF
TT
VDDQ
IH
IL
SD
SD
PVIN, AVIN, VDDQ to GND
No pin should exceed AVIN
Storage Temp. Range
Junction Temperature
Lead Temperature (Soldering, 10 sec)
_HYS
TT
Symbol
/V
TT
V
V
Impedance
V
V
Offset (V
Quiescent Current
(Note 5)
VDDQ Input Impedance
Quiescent Current in
Shutdown (Note 5)
Shutdown Leakage
Current
Minimum Shutdown
High Level
Minimum Shutdown
Low Level
V
Thermal Shutdown
Thermal Shutdown
Hysteresis
REF
REF
TT
TT
SENSE
Output Voltage
Output Voltage
Output
Voltage
Parameter
Input Current
REF
-V
TT
)
−65˚C to +150˚C
Specifications with standard typeface are for T
PVIN = VDDQ = 1.7V
PVIN = VDDQ = 1.8V
PVIN = VDDQ = 1.9V
I
I
I
I
I
I
I
SD = 0V
SD = 0V
(Note 6)
−0.3V to +6V
REF
OUT
OUT
OUT
OUT
OUT
OUT
(Note 1)
PVIN = VDDQ = 1.7V
PVIN = VDDQ = 1.8V
PVIN = VDDQ = 1.9V
PVIN = VDDQ = 1.7V
PVIN = VDDQ = 1.8V
PVIN = VDDQ = 1.9V
= -30 to +30 µA
= 0A
=
= 0A
= -0.5A
= +0.5A
= 0A (Note 5)
±
150˚C
260˚C
Conditions
0.5A (Note 7)
J
= 0˚C to +125˚C) (Note 4). Unless otherwise specified,
3
Operating Range
SO-8 Thermal Resistance (θ
PSOP-8 Thermal Resistance (θ
Minimum ESD Rating (Note 2)
Junction Temp. Range (Note 3)
AVIN to GND
0.837
0.887
0.936
0.822
0.874
0.923
0.828
0.878
0.928
Min
-25
-25
-25
1.9
J
= 25˚C and limits in boldface
0.860
0.910
0.959
0.856
0.908
0.957
0.856
0.908
0.957
Typ
320
100
115
165
2.5
13
10
0
0
0
2
JA
)
JA
)
0.887
0.937
0.986
0.887
0.939
0.988
0.890
0.940
0.990
Max
500
150
0.8
25
25
25
5
0˚C to +125˚C
2.2V to 5.5V
www.national.com
151˚C/W
43˚C/W
Celsius
Celsius
Units
mV
kΩ
µA
kΩ
µA
µA
nA
V
V
V
V
1kV