NE57811S Philipss, NE57811S Datasheet - Page 4

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NE57811S

Manufacturer Part Number
NE57811S
Description
Advanced DDR memory termination power with shutdown
Manufacturer
Philipss
Datasheet

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1. Limits are 100% production tested at 25 C. Limits over the operating temperature range are guaranteed through correlation using Statistical
2. Ceramic capacitors only. Low ESR electrolytic capacitors are not necessary.
3. RefOut voltage referenced to
4. V
Philips Semiconductors
ELECTRICAL CHARACTERISTICS
T
NOTES:
2003 Apr 02
amb
V
V
V
I
I
I
C
Reference Out
RefOut
IrefOut
C
Power Stage
I
T
Q(op)
Q(SD)
TT
lim
SYMBOL
ACC
V
lim
TT
DD
Advanced DDR memory termination power
with shutdown
LOAD
LOAD
Quality Control (SQC) methods.
TT
ACC
= 0 C to +70 C, V
= V
TT
– V
Output voltage
Output voltage accuracy (Note 4)
Supply voltage
Supply current
Standby quiescent current
Output current
Load regulation
Load capacitance (Note 2)
Voltage reference out (Note 3)
Reference Out current max
Load capacitance
Current limit
Temperature shutdown
Temperature shutdown hysteresis
DD
/2.
DD
PARAMETER
= 2.5 V; I
1
/
2
V
TT
DD
= –3.5 A to +3.5 A, unless otherwise specified.
.
I
I
Standby asserted
V
V
I
I
Stable operation
IrefOut = 0 A; source or sink
Stable operation
TT
TT
TT
TT
DD
DD
= 0 A
= 0 A
= 1.0 A
= 3.5 A
= 2.5 V
= 1.6 V
CONDITIONS
V
4
DD
3.6 V
MIN.
–3.5
–2.5
–15
–18
–15
1.6
2.2
0.1
3.6
V
V
+150
TYP.
100
DD
1.2
DD
4.5
14
20
3
6
/2
/2
MAX.
1.35
+3.5
+2.5
+15
+18
+15
NE57811
3.6
5.6
30
Product data
UNIT
mV
mA
mA
mV
mV
mV
mA
V
V
A
A
A
C
C
F
F

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