NE57811S Philipss, NE57811S Datasheet - Page 12
NE57811S
Manufacturer Part Number
NE57811S
Description
Advanced DDR memory termination power with shutdown
Manufacturer
Philipss
Datasheet
1.NE57811S.pdf
(13 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE57811S/G
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
NE57811S/N1Ј¬518
Manufacturer:
NXP
Quantity:
2 000
Philips Semiconductors
REVISION HISTORY
2003 Apr 02
Rev
_2
_1
Advanced DDR memory termination power
with shutdown
Date
20030402
20020716
Description
Product data (9397 750 11216). ECN 853-2360 29724 of 28 March 2003. Supersedes data of 2002 Jul 16.
Modifications:
Product data (9397 750 10151). ECN 853-2360 28625 of 16 July 2002.
Page 4, Electrical characteristics table:
– (description): from “T
– Output voltage accuracy: add symbol “V
– Change symbol “I
– Add I
– I
–
– RefOut: add condition “IrefOut = 0 A; source or sink”; change Min. value from “–10” to “–15”; change Max. value
– Change subheading row from “Protection” to “Power Stage”.
value from “+10” to “+15”.
from “+10” to “+15”.
TT
V
: change Condition from “V
TT
, under condition I
Q(SD)
row to table.
Q
” to “I
amb
TT
Q(op)
= 25 C” to “T
= 3.5 A: change Min. value from “–20” to “–18”; change Max. value from “+20” to “+18”.
”; change Typ. value from “20” to “14”
DD
= 2.25 – 3.6 V” to “2.5 V
amb
ACC
= 0 C to +70 C”
12
”; add Note 4; change Min. value from “–10” to “–15”; change Max.
V
DD
3.6 V”.
NE57811
Product data