NE57811S Philipss, NE57811S Datasheet - Page 12

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NE57811S

Manufacturer Part Number
NE57811S
Description
Advanced DDR memory termination power with shutdown
Manufacturer
Philipss
Datasheet

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Philips Semiconductors
REVISION HISTORY
2003 Apr 02
Rev
_2
_1
Advanced DDR memory termination power
with shutdown
Date
20030402
20020716
Description
Product data (9397 750 11216). ECN 853-2360 29724 of 28 March 2003. Supersedes data of 2002 Jul 16.
Modifications:
Product data (9397 750 10151). ECN 853-2360 28625 of 16 July 2002.
Page 4, Electrical characteristics table:
– (description): from “T
– Output voltage accuracy: add symbol “V
– Change symbol “I
– Add I
– I
– RefOut: add condition “IrefOut = 0 A; source or sink”; change Min. value from “–10” to “–15”; change Max. value
– Change subheading row from “Protection” to “Power Stage”.
value from “+10” to “+15”.
from “+10” to “+15”.
TT
V
: change Condition from “V
TT
, under condition I
Q(SD)
row to table.
Q
” to “I
amb
TT
Q(op)
= 25 C” to “T
= 3.5 A: change Min. value from “–20” to “–18”; change Max. value from “+20” to “+18”.
”; change Typ. value from “20” to “14”
DD
= 2.25 – 3.6 V” to “2.5 V
amb
ACC
= 0 C to +70 C”
12
”; add Note 4; change Min. value from “–10” to “–15”; change Max.
V
DD
3.6 V”.
NE57811
Product data

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