FM200TU-2A_09 MITSUBISHI [Mitsubishi Electric Semiconductor], FM200TU-2A_09 Datasheet - Page 5

• Manufacturer Part Number: FM200TU-2A_09
• Description: MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
• Manufacturer: MITSUBISHI [Mitsubishi Electric Semiconductor]

CHIP LAYOUT
10
10
10
10
REVERSE RECOVERY CHARACTERISTICS
7
5
3
2
7
5
3
2
7
5
3
2
3
2
1
0
10
1
2
SOURCE CURRENT I
OF FREE-WHEEL DIODE
24.6
25.6
3
12
7
5 7
(TYPICAL)
47.2
TrUP
TrUN
10
57.6
58.6
2
t
I
rr
rr
U
1
6
Conditions:
V
V
R
T
Inductive load
2
DD
GS
ch
G
= 13Ω
= 25°C
3
S
= 48V
= ±15V
90.6
91.6
(A)
Th
P
5 7
(110)
(97)
TrVP
10
TrVN
3
N
V
5
13
14
TrWP
Ｔ ｒＷＮ
10
10
10
10
–1
–2
–3
7
5
3
2
7
5
3
2
7
5
3
2
0
10
W
Single pulse
T
Per unit base = R
–3
ch
IMPEDANCE CHARACTERISTICS
2 3 5 7
= 25°C
TRANSIENT THERMAL
10
–2
2 3 5 7
HIGH POWER SWITCHING USE
TIME (s)
th(ch-c)
10
10
–1
–5
2 3 5 7
2 3 5 7
INSULATED PACKAGE
= 0.30K/W
FM200TU-2A
10
10
–4
0
LABEL SIDE
2 3 5 7
2 3 5 7
10
10
10
10
10
7
5
3
2
7
5
3
2
–3
1
–1
–2
–3
Feb. 2009