HN58S65AT-15 HITACHI [Hitachi Semiconductor], HN58S65AT-15 Datasheet - Page 4

• Manufacturer Part Number: HN58S65AT-15
• Description: 64 k EEPROM (8-kword x 8-bit) Ready/Busy function
• Manufacturer: HITACHI [Hitachi Semiconductor]

HN58S65A Series
Absolute Maximum Ratings
Parameter
Power supply voltage relative to V
Input voltage relative to V
Operating temperature range *
Storage temperature range
Notes: 1. Vin min : –3.0 V for pulse width
Recommended DC Operating Conditions
Parameter
Supply voltage
Input voltage
Operating temperature
Notes: 1. V
DC Characteristics (Ta = 0 to + 70˚C, V
Parameter
Input leakage current
Output leakage current
Standby V
Operating V
Output low voltage
Output high voltage
2. Including electrical characteristics and data retention.
3. Should not exceed V
2. V
CC
CC
current
IL
IH
current
min: –1.0 V for pulse width
max: V
CC
+ 1.0 V for pulse width
SS
Symbol
I
I
I
I
I
V
V
LI
LO
CC1
CC2
CC3
OL
OH
2
CC
SS
+ 1.0 V.
Min
—
—
—
—
—
—
—
V
CC
Symbol
V
V
V
V
Topr
50 ns.
CC
SS
IL
IH
0.8 —
50 ns.
50 ns.
Symbol
V
Vin
Topr
Tstg
Typ
—
—
1 to 2
—
—
—
—
CC
CC
= 2.2 to 3.6 V)
Min
2.2
0
–0.3*
V
0
CC
Max
2
2
3.5
500
6
12
0.4
—
1
0.7
Value
–0.6 to +7.0
–0.5*
0 to +70
–55 to +125
Unit
mA
mA
V
V
A
A
A
A
Typ
3.0
0
—
—
—
1
to +7.0*
Test conditions
V
V
CE = V
CE = V
Iout = 0 mA, Duty = 100%,
Cycle = 1 s at V
Iout = 0 mA, Duty = 100%,
Cycle = 150 ns at V
I
I
OL
OH
CC
CC
= 1.0 mA
= –100 A
= 5.5 V, Vin = 5.5 V
= 5.5 V, Vout = 5.5/0.4 V
Max
3.6
0
0.4
V
70
3
CC
IH
CC
+ 0.3*
2
CC
= 3.6 V
CC
Unit
V
V
˚C
˚C
Unit
V
V
V
V
˚C
= 3.6 V