SI6968BEDQ-T1 VISHAY [Vishay Siliconix], SI6968BEDQ-T1 Datasheet - Page 2

• Manufacturer Part Number: SI6968BEDQ-T1
• Description: Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection
• Manufacturer: VISHAY [Vishay Siliconix]

Si6968BEDQ
Vishay Siliconix
Notes
a.
b.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain Source On State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
For design aid only; not subject to production testing.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
10
8
6
4
2
0
a
0
Parameter
Gate-Current vs. Gate-Source Voltage
3
b
b
V
GS
b
- Gate-to-Source Voltage (V)
6
b
b
J
= 25_C UNLESS OTHERWISE NOTED)
9
12
Symbol
V
r
r
I
DS(
DS(on)
t
t
I
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
DSS
Q
g
t
SD
t
fs
gs
gd
r
f
g
)
15
18
V
V
I
DS
D
DS
^ 1 A, V
= 10 V, V
V
= 16 V, V
V
V
V
V
DS
V
V
V
V
DS
I
DS
Test Condition
GS
GS
S
DS
DD
DD
DS
= 0 V, V
= 1.5 A, V
= V
v 5 V, V
= 4.5 V, I
= 2.5 V, I
= 16 V, V
= 10 V, I
= 10 V, R
= 10 V, R
GEN
GS
GS
GS
, I
= 4.5 V, R
10,000
GS
= 4.5 V, I
= 0 V, T
1,000
D
GS
D
GS
0.01
D
D
GS
L
L
100
= 250 mA
= "4.5 V
0.1
= 6.5 A
10
= 6.5 A
= 5.5 A
= 10 W
= 10 W
= 4.5 V
= 0 V
1
= 0 V
0
J
D
G
= 70_C
= 6.5 A
= 6 W
Gate Current vs. Gate-Source Voltage
3
T
V
J
GS
= 150_C
- Gate-to-Source Voltage (V)
Min
6
0.6
30
T
0.0165
J
Typ
9
0.023
0.71
245
330
860
510
= 25_C
2.2
3.6
30
12
S-31362—Rev. A, 30-Jun-03
Document Number: 72274
a
12
Max
"200
0.022
0.030
1300
365
495
765
1.6
1.2
25
18
1
15
Unit
nC
nA
mA
mA
ns
ns
W
W
V
A
S
V