SI6968BEDQ-T1 VISHAY [Vishay Siliconix], SI6968BEDQ-T1 Datasheet

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SI6968BEDQ-T1

Manufacturer Part Number
SI6968BEDQ-T1
Description
Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection
Manufacturer
VISHAY [Vishay Siliconix]
Datasheet

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Notes
a.
Document Number: 72274
S-31362—Rev. A, 30-Jun-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on FR4 Board, t v 10 sec.
i
DS
20
20
G
S
S
(V)
D
1
1
1
J
Si6968BEDQ-T1 (with Tape and Reel)
1
2
3
4
ti
D
Ordering Information:
t A bi
TSSOP-8
Top View
J
J
a
a
0.022 @ V
0.030 @ V
= 150_C)
= 150_C)
t
a
a
Parameter
Parameter
r
DS(on)
Dual N-Channel 2.5-V (G-S) MOSFET
a
a
GS
GS
Common Drain, ESD Protection
(W)
= 4.5 V
= 2.5 V
8
7
6
5
a
D
S
S
G
2
2
2
G
1
A
Steady-State
Steady-State
t v 10 sec
T
T
T
T
= 25_C UNLESS OTHERWISE NOTED)
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
I
D
*Typical value by design
6.5
5.5
(A)
*300 W
N-Channel
Symbol
Symbol
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
stg
S
D
1
FEATURES
D TrenchFETr Power MOSFET
D ESD Protected: 3000 V
10 secs
G
Typ
0.96
100
6.5
5.5
1.5
1.5
72
55
2
- 55 to 150
"12
*300 W
20
30
N-Channel
Steady State
Vishay Siliconix
Si6968BEDQ
Max
0.64
120
5.2
3.5
1.0
1.0
83
70
S
D
2
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
1

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SI6968BEDQ-T1 Summary of contents

Page 1

... Top View Ordering Information: Si6968BEDQ-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

Page 2

... Si6968BEDQ Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current b On-State Drain Current b b Drain-Source On-State Resistance Drain Source On State Resistance b Forward Transconductance b Diode Forward Voltage ...

Page 3

... T - Junction Temperature (_C) J Document Number: 72274 S-31362—Rev. A, 30-Jun- 4 0.1 100 125 150 Si6968BEDQ Vishay Siliconix Transfer Characteristics 125_C C 5 25_C - 55_C 0 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Gate Charge ...

Page 4

... Si6968BEDQ Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Gate-to-Source Voltage 0.05 0. 0.02 0.01 0. Gate-to-Source Voltage (V) GS Single Pulse Power 200 160 120 0.001 0.01 0.1 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

Page 5

... TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Document Number: 72274 S-31362—Rev. A, 30-Jun- Square Wave Pulse Duration (sec) Si6968BEDQ Vishay Siliconix 1 10 www.vishay.com 5 ...

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