2N6667_05 ONSEMI [ON Semiconductor], 2N6667_05 Datasheet
2N6667_05
Related parts for 2N6667_05
2N6667_05 Summary of contents
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Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − 3500 (Typ 4.0 Adc FE C • Collector−Emitter Sustaining Voltage − @ 200 mAdc ...
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MAXIMUM RATINGS (Note 1) Î Î Î ...
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R & R VARIED TO OBTAIN DESIRED CURRENT LEVELS MUST BE FAST RECOVERY TYPES e.g 100 mA 1N5825 USED ABOVE 100 mA MSD6100 USED BELOW I B FOR t AND t ...
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T = 150°C J 0.3 0.2 BONDING WIRE LIMIT 0.1 THERMAL LIMIT @ T = 25°C C SECOND BREAKDOWN LIMIT 0.05 CURVES APPLY BELOW RATED V 0.03 0. ...
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T = 25° 250 BE(sat 1 CE(sat 0.5 0.1 0.2 0.3 0.5 0.7 1 ...
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