2N6667_05 ONSEMI [ON Semiconductor], 2N6667_05 Datasheet

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2N6667_05

Manufacturer Part Number
2N6667_05
Description
Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60−80 V, 65 W
Manufacturer
ONSEMI [ON Semiconductor]
Datasheet
2N6667, 2N6668
Darlington Silicon
Power Transistors
applications.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 5
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Designed for general−purpose amplifier and low speed switching
High DC Current Gain −
Collector−Emitter Sustaining Voltage − @ 200 mAdc
Low Collector−Emitter Saturation Voltage −
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
TO−220AB Compact Package
Complementary to 2N6387, 2N6388
Pb−Free Packages are Available*
h
V
V
FE
CE(sat)
CEO(sus)
BASE
= 3500 (Typ) @ I
= 2.0 Vdc (Max)@ I
Figure 1. Darlington Schematic
= 60 Vdc (Min) − 2N6667
= 80 Vdc (Min) − 2N6668
≈ 8 k
C
= 4.0 Adc
≈ 120
COLLECTOR
EMITTER
C
= 5.0 Adc
1
2N6667
2N6667G
2N6668
2N6668G
1
Device
2
3
POWER TRANSISTORS
CASE 221A−09
ORDERING INFORMATION
10 A, 60−80 V, 65 W
TO−220AB
x
A
Y
WW = Work Week
G
STYLE 1:
DARLINGTON
http://onsemi.com
PNP SILICON
PIN 1. BASE
= 7 or 8
= Assembly Location
= Year
= Pb−Free Package
4
TO−220AB
TO−220AB
TO−220AB
TO−220AB
(Pb−Free)
(Pb−Free)
2. COLLECTOR
3. EMITTER
4. COLLECTOR
Package
Publication Order Number:
MARKING
DIAGRAM
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
AYWWG
2N666x
Shipping
2N6667/D

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2N6667_05 Summary of contents

Page 1

Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − 3500 (Typ 4.0 Adc FE C • Collector−Emitter Sustaining Voltage − @ 200 mAdc ...

Page 2

MAXIMUM RATINGS (Note 1) Î Î Î ...

Page 3

R & R VARIED TO OBTAIN DESIRED CURRENT LEVELS MUST BE FAST RECOVERY TYPES e.g 100 mA 1N5825 USED ABOVE 100 mA MSD6100 USED BELOW I B FOR t AND t ...

Page 4

T = 150°C J 0.3 0.2 BONDING WIRE LIMIT 0.1 THERMAL LIMIT @ T = 25°C C SECOND BREAKDOWN LIMIT 0.05 CURVES APPLY BELOW RATED V 0.03 0. ...

Page 5

T = 25° 250 BE(sat 1 CE(sat 0.5 0.1 0.2 0.3 0.5 0.7 1 ...

Page 6

Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products ...

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