ZXMN6A25DN8_06 ZETEX [Zetex Semiconductors], ZXMN6A25DN8_06 Datasheet
ZXMN6A25DN8_06
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ZXMN6A25DN8_06 Summary of contents
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ZXMN6A25DN8 Dual 60V SO8 N-channel enhancement mode MOSFET Summary V R (BR)DSS DS(on) 0.050 @ V 60 0.070 @ V GS Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and ...
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Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C amb Linear derating factor Power dissipation at ...
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Typical characteristics Issue 4 - November 2006 © Zetex Semiconductors plc 2006 ZXMN6A25DN8 3 www.zetex.com ...
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Electrical characteristics (at T Parameter Static Drain-source breakdown voltage V Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state (*) resistance (*)(‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) Switching ...
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Typical characteristics Issue 4 - November 2006 © Zetex Semiconductors plc 2006 ZXMN6A25DN8 5 www.zetex.com ...
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Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 4 - November 2006 © Zetex Semiconductors plc 2006 ...
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Package outline - SO8 DIM Inches Min. Max. A 0.053 0.069 A1 0.004 0.010 D 0.189 0.197 H 0.228 0.244 E 0.150 0.157 L 0.016 0.050 Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Issue 4 ...
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Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...