ZXMN6A25 ZETEX [Zetex Semiconductors], ZXMN6A25 Datasheet

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ZXMN6A25

Manufacturer Part Number
ZXMN6A25
Description
60V SO8 N-channel enhancement mode MOSFET
Manufacturer
ZETEX [Zetex Semiconductors]
Datasheet

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ZXMN6A25N8
60V SO8 N-channel enhancement mode MOSFET
Summary
Description
This new generation Trench MOSFET from
Zetex features low on-resistance and fast switching,
making it ideal for high efficiency power management applications.
Features
Applications
Ordering information
Device marking
ZXMN6A25
Issue 1 - April 2008
© Zetex Semiconductors plc 2008
Device
ZXMN6A25N8TA
V
(BR)DSS
Low on-resistance
Fast switching speed
Low gate drive
SO8 package
DC-DC Converters
Power management functions
Disconnect switches
Motor control
60
0.070
0.050
R
DS(on)
@
@
V
V
Reel size
GS
(inches)
GS
(Ω)
=4.5V
=10V
7
Tape width
(mm)
I
D
7.0
12
(A)
1
Quantity
per reel
500
G
S
S
S
Top view
G
www.zetex.com
S
D
D
D
D
D

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ZXMN6A25 Summary of contents

Page 1

... Applications DC-DC Converters • Power management functions • Disconnect switches • Motor control • Ordering information Device Reel size (inches) ZXMN6A25N8TA 7 Device marking ZXMN6A25 Issue 1 - April 2008 © Zetex Semiconductors plc 2008 I (A) D 7.0 Tape width Quantity (mm) per reel 12 500 ...

Page 2

... Thermal resistance from junction to solder-point (at the end of the drain lead). Issue 1 - April 2008 © Zetex Semiconductors plc 2008 (b) = 10V; T =25° (b) = 10V; T =70° (a) = 10V; T =25° (a)(d) = 10V; T =25° (b) (c) (a) (b) (d) 2 ZXMN6A25N8 Symbol Limit Unit DSS ± 5 4.5 4.3 7 25.7 A ...

Page 3

... Zetex Semiconductors plc 2008 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1ms 100µs 0.2 0 100 10 Single Pulse D=0.05 D=0 100 1k 100µ 3 ZXMN6A25N8 25mm x 25mm 1oz FR4 100 120 140 160 Temperature (°C) Derating Curve Single Pulse T =25°C amb 1m 10m 100m 1 10 100 Pulse Width (s) Pulse Power Dissipation www.zetex.com 1k ...

Page 4

... DSS GSS 1 GS(th) DS(on) 10.2 fs 1063 iss 104 oss 64 rss 3.8 d(on) 4.0 r 26.2 d(off) 10.6 f 11.0 g 20.4 g 4.1 gs 5.1 gd 0.85 SD 22 ZXMN6A25N8 Max. Unit Conditions V I =250μ 1.0 µA V =60V 100 nA =± V 20V =250μ 10V 3.6A 0.050 Ω 4.5V, I 0.070 ...

Page 5

... V GS 2.5V 0.01 10 1.4 1.2 1.0 0 25°C 0 10V DS 0 -50 Normalised Curves v Temperature 100 T = 25° 4.5V 0.1 10V 0.01 0 Source-Drain Diode Forward Voltage 5 ZXMN6A25N8 T = 150°C 4.5V 10V 4V 3. Drain-Source Voltage (V) DS Output Characteristics V = 10V 4. DS(on) V GS(th 250uA 100 Tj Junction Temperature (° ...

Page 6

... V - Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage Test circuits Issue 1 - April 2008 © Zetex Semiconductors plc 2008 1MHz OSS C RSS Gate-Source Voltage v Gate Charge 6 ZXMN6A25N8 = 4. 30V Charge (nC) www.zetex.com 25 ...

Page 7

... Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters Issue 1 - April 2008 © Zetex Semiconductors plc 2008 Millimeters DIM Min. Max. 1.35 1.75 e 0.10 0.25 b 4.80 5.00 c 5.80 6.20 U 3.80 4.00 h 0.40 1. ZXMN6A25N8 Inches Millimeters Min. Max. Min. 0.050 BSC 1.27 BSC 0.013 0.020 0.33 0.008 0.010 0.19 0° 8° 0° 0.010 0.020 0. www.zetex.com Max. 0.51 0.25 8° ...

Page 8

... Fax: (49 Fax: (1) 631 360 8222 europe.sales@zetex.com usa.sales@zetex.com © 2008 Published by Zetex Semiconductors plc Issue 1 - April 2008 © Zetex Semiconductors plc 2008 ZXMN6A25N8 Asia Pacific Corporate Headquarters Zetex (Asia Ltd) Zetex Semiconductors plc 3701-04 Metroplaza Tower 1 Zetex Technology Park, Chadderton ...

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