IRFR4615TRPBF IRF [International Rectifier], IRFR4615TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFR4615TRPBF
• Description: HEXFET Power MOSFET
• Manufacturer: IRF [International Rectifier]

4
1000
100
1.0
10
Fig 11. Typical C
0.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
40
35
30
25
20
15
10
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
5
0
-20
25
T J = 175°C
0.4
V SD , Source-to-Drain Voltage (V)
0
V DS, Drain-to-Source Voltage (V)
Case Temperature
0.6
50
Forward Voltage
20
T C , Case Temperature (°C)
0.8
OSS
40
75
T J = 25°C
Stored Energy
60
1.0
100
80 100 120 140 160
1.2
V GS = 0V
125
1.4
150
1.6
175
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
1000
500
450
400
350
300
250
200
150
100
100
190
185
180
175
170
165
160
155
150
145
140
0.1
50
10
0
1
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
-60 -40 -20 0 20 40 60 80 100120140160180
25
1
Tc = 25°C
Tj = 175°C
Single Pulse
Id = 5mA
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
75
10
10msec
DC
1msec
100µsec
100
TOP
BOTTOM 21A
125
100
150
I D
5.3A
2.8A
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1000
175