ZXM64N035G_04 ZETEX [Zetex Semiconductors], ZXM64N035G_04 Datasheet - Page 3

• Manufacturer Part Number: ZXM64N035G_04
• Description: 35V N-CHANNEL ENHANCEMENT MODE MOSFET
• Manufacturer: ZETEX [Zetex Semiconductors]

ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Width=300 s. Duty cycle
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JUNE 2004
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
(3)
(2) (3)
(1)
(3)
(3)
(1)(3)
(1)
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
A
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
rr
= 25°C unless otherwise stated)
3
MIN.
35
1.0
4.3
2% .
TYP.
950
200
50
4.2
4.6
20.5
8
24.5
19.1
MAX.
1
100
0.050
0.062
27
5
4.5
0.95
UNIT CONDITIONS
V
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
A
ZXM64N035G
I
V
I
V
V
V
V
f=1MHz
V
R
V
I
T
V
T
di/dt= 100A/ s
D
V
D
D
J
J
DS
GS
GS
DS
DS
DD
G
DS
GS
=250µA, V
=250 A, V
=3.7A
GS
=25 C, I
=25 C, I
=6.0 , V
=35V, V
=10V, I
=4.5V, I
=10V,I
=25V, V
=24V,V
=0V
=15V, I
= 20V, V
D
S
F
D
GS
=3.7A,
GS
=3.7A,
=1.9A
D
GS
D
GS
=3.7A
GS
DS
=3.7A
=1.9A
=10V,
=10V
=0V
DS
=0V,
=0V
= V
=0V
GS