ZXM64N035G_04 ZETEX [Zetex Semiconductors], ZXM64N035G_04 Datasheet

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ZXM64N035G_04

Manufacturer Part Number
ZXM64N035G_04
Description
35V N-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturer
ZETEX [Zetex Semiconductors]
Datasheet
35V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of high cell density planar MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
· Low on-resistance
· Fast switching speed
· Low threshold
· Low gate drive
· SOT223 package
APPLICATIONS
· 50W Class D Audio Output Stage
· Motor Control
ORDERING INFORMATION
DEVICE MARKING
· ZXM6
ISSUE 1 - JUNE 2004
DEVICE
ZXM64N035GTA
ZXM64N035GTC
(BR)DSS
4N035
= 35V: R
DS(on)
REEL
SIZE
7”
13”
= 0.050 : I
TAPE
WIDTH
12mm
12mm
D
= 6.7A
QUANTITY
PER REEL
1000 units
4000 units
1
ZXM64N035G
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ZXM64N035G_04 Summary of contents

Page 1

N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V = 35V 0.050 : I (BR)DSS DS(on) DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with ...

Page 2

ZXM64N035G ABSOLUTE MAXIMUM RATING PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (V =10V =10V =10V (c) Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (a) Power ...

Page 3

ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1)(3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING Turn-On Delay ...

Page 4

ZXM64N035G PACKAGE DIMENSIONS DIM Millimeters Inches Min Max Min A 6.3 6.7 0.248 0.264 B 3.3 3.7 0.130 0.146 C - 1.7 - 0.067 D 0.6 0.8 0.024 0.031 E 2.9 3.1 0.114 0.122 F 0.24 0.32 0.009 G NOM ...

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