ZXMN3F318DN8TA ZETEX [Zetex Semiconductors], ZXMN3F318DN8TA Datasheet - Page 8

• Manufacturer Part Number: ZXMN3F318DN8TA
• Description: 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET
• Manufacturer: ZETEX [Zetex Semiconductors]

Q2 Typical Characteristics
Issue 1 – March 2008
© Zetex Semiconductors plc 2008
1000
0.01
0.01
Typical Transfer Characteristics
0.01
100
0.1
0.1
0.1
On-Resistance v Drain Current
10
10
10
0.01
1
1
1
T = 25°C
V
0.1
T = 150°C
DS
V
V
= 10V
2.5V
DS
GS
Output Characteristics
2
0.1
Drain-Source Voltage (V)
Gate-Source Voltage (V)
I
D
Drain Current (A)
10V
1
1
3V
4.5V
T = 25°C
3
T = 25°C
3.5V
4V
4V
10
10
3V
3.5V
4.5V
10V
2.5V
V
V
GS
GS
4
8
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
1E-3
0.01
0.01
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1
10
10
1
1
-50
0.2
T = 150°C
0.1
V
V
Tj Junction Temperature (°C)
T = 150°C
DS
SD
Output Characteristics
0.4
Drain-Source Voltage (V)
0
Source-Drain Voltage (V)
ZXMN3F318DN8
V
I
V
I
D
D
GS
GS
= 5A
= 250uA
10V
= 10V
= V
1
DS
0.6
50
4.5V
www.zetex.com
T = 25°C
100
0.8
4V
3.5V
10
2.5V
R
V
DS(on)
3V
GS(th)
V
2V
GS
150
1.0