ZXMN3F318DN8TA ZETEX [Zetex Semiconductors], ZXMN3F318DN8TA Datasheet - Page 2

• Manufacturer Part Number: ZXMN3F318DN8TA
• Description: 30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET
• Manufacturer: ZETEX [Zetex Semiconductors]

ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current V
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a) (d)
Junction to Ambient (a) (e)
Junction to Ambient (b) (d)
Junction to Lead (f)
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz
(b) For a device surface mounted on FR4 PCB measured at t ≤ 10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
(f) Thermal resistance from junction to solder-point (at the end of the drain lead).
Issue 1 – March 2008
© Zetex Semiconductors plc 2008
copper, in still air conditions.
maximum junction temperature.
A
A
A
=25°C (a) (d)
=25°C (a) (e)
=25°C (b) (d)
V
V
GS
GS
GS
=10V; T
=10V; T
=10V; T
A
A
A
=25°C (b)
=70°C (b)
=25°C (a)
2
SYMBOL
V
V
I
I
I
I
P
P
P
T
D
DM
S
SM
j
DSS
GS
D
D
D
, T
SYMBOL
R
R
R
R
stg
θJA
θJA
θJA
θJL
ZXMN3F318DN8
LIMIT
± 20
7.3
5.9
5.7
3.5
Q1
30
33
33
-55 to +150
VALUE
1.25
1.8
2.1
10
14
17
100
70
60
53
www.zetex.com
LIMIT
± 20
4.8
4.6
3.3
Q2
30
25
25
6
°C/W
°C/W
°C/W
°C/W
mW/°C
mW/°C
mW/°C
UNIT
UNIT
°C
W
W
W
V
V
A
A
A
A