BSZ160N10NS3G INFINEON [Infineon Technologies AG], BSZ160N10NS3G Datasheet

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TM OptiMOS 3 Power-Transistor Features • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS compliant • Qualified according ...

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Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case Device on PCB Electrical characteristics Static characteristics ...

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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...

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Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter ...

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Typ. output characteristics I =f =25 ° parameter 100 Typ. transfer characteristics I =f(V ...

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Drain-source on-state resistance =10 V DS(on 98 -60 - Typ. capacitances C =f ...

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Avalanche characteristics =25 Ω parameter: T j(start) 100 10 125 ° Drain-source breakdown voltage V =f BR(DSS 110 105 100 95 ...

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Package Outline: PG-TSDSON-8 Footprint Dimensions in mm Rev. 1.2 page 8 BSZ160N10NS3 G 2009-11-12 ...

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Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...