SUD23N06-31_11 VISHAY [Vishay Siliconix], SUD23N06-31_11 Datasheet - Page 4

• Manufacturer Part Number: SUD23N06-31_11
• Description: N-Channel 60 V (D-S), MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SUD23N06-31
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
0.08
0.06
0.04
0.02
0.00
500
400
300
200
100
2.1
1.8
1.5
1.2
0.9
0.6
0
- 50
0
0 .
0
0
On-Resistance vs. Gate-to-Source Voltage
1
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Junction Temperature
1
- 25
I
D
= 15 A
2
V
0.01
GS
T
0
J
- Junction Temperature (°C)
3
- Gate-to-Source Voltage (V)
25
4
Time (s)
0.1
50
5
6
75
V
GS
T
7
J
T
= 10 V
100
= 25 °C
J
V
1
= 125 °C
GS
8
= 4.5 V
125
9
150
10
1
0
- 0.4
- 0.7
- 1.0
- 0.1
0.01
0.001
100
0.5
0.2
0.01
0.1
100
10
0.1
1
10
- 50
0.1
1
0.0
Limited by R
* V
Single Pulse
T
Single Pulse Power, Junction-to-Case
- 25
GS
C
Source-Drain Diode Forward Voltage
= 25 °C
> minimum V
0.2
V
V
DS
T
SD
0
J
DS(on)
- Drain-to-Source Voltage (V)
= 150 °C
Threshold Voltage
- Source-to-Drain Voltage (V)
T
1
0.4
J
25
- Temperature (°C)
*
GS
at which R
50
0.6
S11-0181-Rev. B, 07-Feb-11
BVDSS Limited
I
Document Number: 68857
D
= 250 µA
75
DS(on)
10
0.8
100
T
is specified
J
I
T
= - 50 °C
D
J
1.0
= 1 mA
125
= 25 °C
10 µs
100 µs
1 ms
10 ms
100 ms, DC
100
150
1.2