2SC3225_06 TOSHIBA [Toshiba Semiconductor], 2SC3225_06 Datasheet - Page 4

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2SC3225_06

Manufacturer Part Number
2SC3225_06
Description
Silicon NPN Epitaxial Type Switching Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1000
800
600
400
200
0.5
0.1
0.3
0.01
5
3
1
0
0
Ta = −55°C
40
0.03
25
Ambient temperature Ta (°C)
100
Collector current I
80
V
BE (sat)
0.1
P
C
– Ta
120
– I
C
C
0.3
(mA)
Common emitter
I C /I B = 300
160
1
200
4
0.05
0.03
0.01
2.0
1.6
1.2
0.8
0.4
0.5
0.3
0.1
0
5
3
1
0.1
0
I C max (continuous)
I C max (pulsed)*
Common emitter
V CE = 1 V
*: Single nonrepetitive pulse
Curves must be derated linearly with
increase in temperature.
Ta = 25°C
0.2
0.3
Collector-emitter voltage V
Base-emitter voltage V
Ta = 100°C
DC operation
Ta = 25°C
0.4
Safe Operating Area
1
I
0.6
C
25 −55
1 s*
– V
3
BE
0.8
100 ms*
BE
10
1.0
V CEO max
CE
(V)
10 ms*
(V)
1.2
30
1 ms*
2006-11-09
2SC3225
1.4

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