2SC3225_06 TOSHIBA [Toshiba Semiconductor], 2SC3225_06 Datasheet

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2SC3225_06

Manufacturer Part Number
2SC3225_06
Description
Silicon NPN Epitaxial Type Switching Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SC3225_06.pdf (5 pages)
Switching Applications
Solenoid Drive Applications
•
•
Absolute Maximum Ratings
High DC current gain: h
Low collector-emitter saturation voltage: V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
FE
TOSHIBA Transistor Silicon NPN Epitaxial Type
= 500 (min) (I
(Ta = 25°C)
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
C
j
2SC3225
C
(I
CE (sat)
C
= 400 mA)
= 300 mA)
−55 to 150
= 0.5 V (max)
Rating
900
150
0.5
40
40
7
2
1
Unit
mW
°C
°C
V
V
V
A
A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
Industrial Applications
TO-92MOD
2-5J1A
2006-11-09
2SC3225
―
Unit: mm

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2SC3225_06 Summary of contents

Page 1

TOSHIBA Transistor Silicon NPN Epitaxial Type Switching Applications Solenoid Drive Applications • High DC current gain 500 (min • Low collector-emitter saturation voltage: V Absolute Maximum Ratings Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current ...

Page 2

Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Switching time Storage time Fall time Marking C3225 (Ta = 25°C) Symbol ...

Page 3

I – 2.4 Common emitter Ta = 25° 1.6 2 1.2 1 0.8 0 0 Collector-emitter voltage ...

Page 4

V – (sat Common emitter 300 −55°C 0.5 25 100 0.3 0.1 0.01 0.03 0.1 0.3 Collector current I (mA – 1000 800 ...

Page 5

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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