2SC2229_06 TOSHIBA [Toshiba Semiconductor], 2SC2229_06 Datasheet - Page 2

• Manufacturer Part Number: 2SC2229_06
• Description: Silicon NPN Triple Diffused Type (PCT Process)
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Electrical Characteristics
Marking
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Note: h
Characteristics
FE
indicator
Characteristics
classification O: 70 to 140, Y: 120 to 240
C2229
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Ta = 25°C)
V
V
Symbol
CE (sat)
BE (sat)
I
I
CBO
EBO
h
C
f
FE
T
ob
(Note)
V
V
V
I
I
V
V
C
C
CB
EB
CE
CE
CB
= 10 mA, I
= 10 mA, I
= 200 V, I
= 5 V, I
= 5 V, I
= 30 V, I
= 10 V, I
2
C
C
Test Condition
B
B
C
E
= 0
= 10 mA
E
= 1 mA
= 1 mA
= 10 mA
= 0, f = 1 MHz
= 0
Min
70
―
―
―
―
―
―
Typ.
120
3.5
―
―
―
―
―
2006-11-09
2SC2229
Max
240
0.1
0.1
0.5
―
1
5
MHz
Unit
μA
μA
pF
V
V