2SC2229_06 TOSHIBA [Toshiba Semiconductor], 2SC2229_06 Datasheet
2SC2229_06
Manufacturer Part Number
2SC2229_06
Description
Silicon NPN Triple Diffused Type (PCT Process)
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SC2229_06.pdf
(5 pages)
Black and White TV Video Output Applications
High-Voltage Switching Applications
Driver Stage Audio Amplifier Applications
•
•
•
Absolute Maximum Ratings
High breakdown voltage: V
Low output capacitance: C
High transition frequency: f
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Characteristics
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
ob
CEO
T
= 5.0 pF (max)
= 120 MHz (typ.)
= 150 V (min)
(Ta = 25°C)
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
C
2SC2229
j
−55 to 150
Rating
200
150
800
150
50
20
5
1
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
TO-92MOD
2-5J1A
2006-11-09
2SC2229
―
Unit: mm
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2SC2229_06 Summary of contents
Page 1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) Black and White TV Video Output Applications High-Voltage Switching Applications Driver Stage Audio Amplifier Applications • High breakdown voltage: V CEO • Low output capacitance 5.0 pF (max) ob ...
Page 2
Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Note: h classification 140, Y: 120 to 240 FE Marking C2229 Characteristics indicator (Ta ...
Page 3
I – 400 300 50 Common emitter 1000 500 Ta = 25°C 40 200 30 150 100 μ Collector-emitter voltage V ( ...
Page 4
– MHz 25° Reverse voltage V ...
Page 5
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...