BFP540ESD_09 INFINEON [Infineon Technologies AG], BFP540ESD_09 Datasheet - Page 3

• Manufacturer Part Number: BFP540ESD_09
• Description: NPN Silicon RF Transistor
• Manufacturer: INFINEON [Infineon Technologies AG]

1
2
Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz
Electrical Characteristics at T
Parameter
AC Characteristics (verified by random sampling)
Transition frequency
I
Collector-base capacitance
V
emitter grounded
Collector emitter capacitance
V
base grounded
Emitter-base capacitance
V
collector grounded
Noise figure
I
I
Power gain, maximum stable
I
Z
Power gain, maximum available
I
Z
Transducer gain
I
I
Third order intercept point at output
V
1dB Compression point at output
I
C
C
C
C
C
C
C
C
G ma = | S 21e / S 12e | (k-(k²-1) 1/2 ), G ms = | S 21e / S 12e |
IP3 value depends on termination of all intermodulation frequency components.
L
L
CB
CE
EB
CE
= 50 mA, V
= 5 mA, V
= 5 mA, V
= 20 mA, V
= 20 mA, V
= 20 mA, V
= 20 mA, V
= 20 mA, V
= Z
= Z
= 0.5 V, f = 1 MHz, V
= 2 V, f = 1 MHz, V
= 2 V, f = 1 MHz, V
= 2 V, I
Lopt
Lopt
, f = 3 GHz
, f = 1.8 GHz
C
CE
CE
CE
CE
CE
CE
CE
= 20 mA, Z
CE
= 2 V, f = 1.8 GHz, Z
= 2 V, f = 3 GHz, Z
= 4 V, f = 1 GHz
= 2 V, Z
= 2 V, Z
= 2 V, Z
= 2 V, Z
= 2 V, Z
BE
BE
S
S
S =
S =
S =
S =
CB
= 0 ,
= 0 ,
= Z
= Z
Z
Z
Z
Z
= 0 ,
1)
L =
L =
L =
L =
Sopt
Sopt
A
1)
50 Ω
50 Ω
50 Ω
50 Ω
= 25°C, unless otherwise specified
,
,
S
2)
,
,
,
,
S
= Z
f
f
f
f
=
=
=
=
= Z
Sopt
1
3GHz
1
1
.
.
.
Sopt
8GHz
8GHz
8GHz
3
Symbol
f
C
C
C
F
G
G
|S
IP
P
T
-1dB
cb
ce
eb
ms
ma
21e
3
|
2
min.
21
16
-
-
-
-
-
-
-
-
-
-
Values
21.5
18.5
24.5
0.14
0.41
0.59
typ.
0.9
1.3
14
30
16
11
BFP540ESD
2009-12-04
max.
0.24
1.4
-
-
-
-
-
-
-
-
-
-
Unit
GHz
pF
dB
dB
dB
dB
dBm