2SA2210_12 SANYO [Sanyo Semicon Device], 2SA2210_12 Datasheet - Page 2

• Manufacturer Part Number: 2SA2210_12
• Description: PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications
• Manufacturer: SANYO [Sanyo Semicon Device]

Electrical Characteristics at Ta=25°C
Switching Time Test Circuit
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
--20
--18
--16
--14
--12
--10
--8
--6
--4
--2
0
INPUT
50Ω
0
PW=20μs
D.C.≤1%
I C =20I B1 = --20I B2 = --7A
Parameter
V BE =5V
V R
Collector-to-Emitter Voltage, V CE -- V
--0.5
100μF
I B1
I B2
+
R B
I C -- V CE
470μF
+
V CC = --20V
--1.0
OUTPUT
R L
I CBO
I EBO
h FE
f T
Cob
V BE (sat)
V (BR)CBO
V (BR)CEO
V (BR)EBO
t on
t stg
t f
V CE (sat)
Symbol
--1.5
I B =0mA
V CB = --40V, I E =0A
V EB = --4V, I C =0A
V CE = --2V, I C = --1A
V CE = --10V, I C = --1A
V CB = --10V, f=1MHz
I C = --7A, I B = --350mA
I C = --7A, I B = --350mA
I C = --100μA, I E =0A
I C = --1mA, R BE =∞
I E = --100μA, I C =0A
See specifi ed Test Circuit
See specifi ed Test Circuit
See specifi ed Test Circuit
IT12019
--2.0
2SA2210
Conditions
--10
--9
--8
--7
--6
--5
--4
--3
--2
--1
0
0
Collector-to-Emitter Voltage, V CE -- V
--0.2
min
--0.4
150
--50
--50
I C -- V CE
--6
Ratings
typ
--200
--0.6
140
215
270
60
20
max
--500
--1.2
--0.8
--10
--10
450
No. A0667-2/5
-- 20 m A
I B =0mA
IT12020
MHz
Unit
mV
μA
μA
pF
ns
ns
ns
V
V
V
V
--1.0