2SA2210_12 SANYO [Sanyo Semicon Device], 2SA2210_12 Datasheet

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2SA2210_12

Manufacturer Part Number
2SA2210_12
Description
PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications
Manufacturer
SANYO [Sanyo Semicon Device]
Datasheet
Ordering number : ENA0667A
2SA2210
Applications
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7529-002
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Relay drivers, lamp drivers, motor drivers.
Adoption of MBIT processes
Low collector-to-emitter saturation voltage
1.47 MAX
3.18
0.8
2.54
1
Parameter
10.16
2
3
2.54
0.5
4.7
V CBO
V CEO
V EBO
I C
I CP
I B
P C
Tj
Tstg
PNP Epitaxial Planar Silicon Transistor
High-Current Switching Applications
DETAIL-A
Symbol
A
2.54
2.76
http://semicon.sanyo.com/en/network
EMC
SANYO Semiconductors
FRAME
(0.84)
Tc=25°C
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220F-3SG
2SA2210
21512 TKIM TC-00002708/30707FA TI IM TC-00000565
Large current capacitance
High-speed switching
Conditions
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity
Marking
DATA SHEET
A2210
LOT No.
Electrical Connection
Ratings
1
--55 to +150
: TO-220F-3SG
: SC-67
: 50 pcs./magazine
--50
--50
--20
--25
150
2
3
- -6
- -3
30
No. A0667-1/5
2
Unit
°C
°C
W
W
A
A
A
V
V
V

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2SA2210_12 Summary of contents

Page 1

Ordering number : ENA0667A 2SA2210 Applications Relay drivers, lamp drivers, motor drivers. • Features Adoption of MBIT processes • Low collector-to-emitter saturation voltage • Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current ...

Page 2

Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Switching ...

Page 3

--30 --25 --20 --15 --10 --5 0 --0.2 --0.4 --0.6 --0.8 0 Base-to-Emitter Voltage 1000 100 ...

Page 4

Forward Bias --25A --20A -- --1 --0 Tc=25° Single pulse --0. ...

Page 5

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical ...

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