MJE13007-M UTC [Unisonic Technologies], MJE13007-M Datasheet - Page 2

• Manufacturer Part Number: MJE13007-M
• Description: NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
• Manufacturer: UTC [Unisonic Technologies]

MJE13007-M
Collector-Emitter Sustaining Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Voltage
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Junction to Ambient
Junction to Case
Note 1: Pulse Test: Pulse Width = 5.0 ms, Duty Cycle≤10%.
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current-Gain-Bandwidth Product
Output Capacitance
RESISTIVE LOAD (TABLE 1)
Delay Time
Rise Time
Storage Time
Fall Time
Note: Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
Collector Current
Base Current
Emitter Current
Power Dissipation
Junction Temperature
Storage Temperature
THERMAL DATA
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATING
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Measurement made with thermocouple contacting the bottom insulated mounting surface of the package
(in a location beneath the die), the device mounted on a heatsink with thermal grease applied at a
mounting torque of 6 to 8•lbs.
UNISONIC TECHNOLOGIES CO., LTD
PARAMETER
www.unisonic.com.tw
PARAMETER
PARAMETER
Continuous
Peak (1)
Continuous
Peak (1)
Continuous
Peak (1)
T
C
= 25°C
SYMBOL
V
V
V
CEO(SUS)
CE(SAT)
BE(SAT)
h
h
I
I
C
CBO
EBO
t
t
FE1
FE2
f
t
t
OB
T
D
R
S
F
(T
SYMBOL
SYMBOL
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
V
I
Duty Cycle≤1.0%
C
C
C
C
C
C
C
C
C
C
C
C
C
C
B1
=25°C, unless otherwise noted)
CES
CES
EB
CB
CC
=10mA, I
=2.0A, V
=5.0A, V
=2.0A, I
=5.0A, I
=5.0A, I
=5.0A, I
=8.0A, I
=2.0A, I
=5.0A, I
=5.0A, I
=5.0A, I
=500mA, V
V
V
V
T
=I
θ
I
I
I
θ
P
T
CEO
CBO
I
CM
STG
EBO
I
BM
I
EM
=9.0V, I
=10V, I
=125V, I
JC
C
B
E
JA
D
B2
J
=700V
=700V, T
=1.0A, t
TEST CONDITIONS
B
B
B
B
B
B
B
B
B
CE
CE
=0.4A
=1.0A
=1.0A, T
=2.5A
=2.0A
=0.4A
=1.0A
=1.0A, T
=2.5A
B
E
C
=0
=0, f=0.1MHz
C
=0
=5.0V
=5.0V
CE
=5.0A,
C
P
=125°C
=10V, f=1.0 MHz
=25μs,
C
C
=100°C
=100°C
NPN SILICON TRANSISTOR
RATINGS
RATINGS
-55~+150
+150
62.5
1.56
400
700
9.0
8.0
4.0
8.0
16
12
24
80
MIN
400
8.0
5.0
4.0
0.025
TYP
0.23
1.2
0.5
1.8
14
80
MAX UNIT
100
0.1
1.0
1.0
2.0
3.0
0.6
3.0
1.2
1.6
1.5
1.5
0.1
1.5
3.0
0.7
40
30
QW-R204-028.A
UNIT
°C/W
°C/W
UNIT
°C
°C
W
2 of 6
V
V
V
A
A
A
A
A
A
MHz
mA
mA
μA
pF
μs
μs
μs
μs
V
V
V