MJE3055T-TA3-T UTC [Unisonic Technologies], MJE3055T-TA3-T Datasheet - Page 2

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MJE3055T-TA3-T

Manufacturer Part Number
MJE3055T-TA3-T
Description
HIGH VOLTAGE TRANSISTOR
Manufacturer
UTC [Unisonic Technologies]
Datasheet
MJE3055T
(Operating temperature range applies unless otherwise specified)
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter on Voltage
DC Current Gain
Current Gain Bandwidth Product
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Total Power Dissipation
Collector Current
Base Current
Junction Temperature
Storage Temperature
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
SYMBOL
TO-220
TO-251/TO-252
V
V
V
BV
BV
BV
CE(SAT)1
CE(SAT)2
h
h
I
I
I
I
BE(ON)
CBO
CEO
EBO
CEX
FE
FE
f
T
CEO
CBO
EBO
1
2
(T c =25 ℃ )
(Ta=25 ℃ , unless otherwise specified)
I
I
I
V
V
V
V
I
I
V
I
I
V
C
C
E
C
C
C
C
CB
CE
CE
EB
CE
CE
=200mA
=10mA
=10mA
=4A, I
=10A, I
=4A, V
=4A, V
=5V
=70V
=30V
=70V, V
=4V, I
=10V, I
TEST CONDITIONS
B
CE
CE
=0.4A
B
C
=3.3A
SYMBOL
=4A
=4V
=10V
C
EB(OFF)
=0.5A, f=1MHz
V
V
V
T
P
T
CBO
CEO
EBO
I
I
STG
C
B
D
J
=1.5V
NPN SILICON TRANSISTOR
MIN
-55 ~ +150
RATINGS
60
70
20
5
5
2
150
70
60
75
20
10
5
6
TYP
MAX
700
100
1.1
1.8
1
1
5
8
QW-R203-011,B
UNIT
UNIT
W
W
MHZ
2 of 2
V
V
V
A
A
mA
mA
mA
µ A
V
V
V
V
V