2N5302_06 ONSEMI [ON Semiconductor], 2N5302_06 Datasheet - Page 4

• Manufacturer Part Number: 2N5302_06
• Description: High−Power NPN Silicon Transistor
• Manufacturer: ONSEMI [ON Semiconductor]

10
10
10
300
200
100
10
10
10
10
10
10
10
10
10
10
10
70
50
30
20
10
− 2
− 3
−1
0.03
−0.4
8
7
6
5
4
3
2
3
2
1
0
0
Figure 11. Effects of Base−Emitter Resistance
0.05
TYPICAL I
FROM FIGURE 13
−0.3
V
20
CE
REVERSE
Figure 13. Collector Cut−Off Region
= 30 V
0.1
−0.2 −0.1
40
V
T
CES
I
C
BE
J
Figure 9. DC Current Gain
T
= I
= 175°C
I
J
, BASE−EMITTER VOLTAGE (VOLTS)
0.3
C
25°C
VALUES OBTAINED
, JUNCTION TEMPERATURE (°C)
, COLLECTOR CURRENT (AMP)
CES
60
−55 °C
I
C
0.5
≈ I
80
0
CES
T
J
= 175°C
I
100
0.1
C
1.0
= 10 x I
0.2
120 140
3.0
100°C
CES
FORWARD
0.3
5.0
I
25°C
C
160
0.4
= 2 x I
V
V
V
CE
CE
CE
10
= 10 V
= 2.0 V
http://onsemi.com
= 30 V
CES
180
0.5
2N5302
200
0.6
30
4
+2.5
+2.0
+1.5
+1.0
+0.5
−0.5
−1.0
−1.5
−2.0
−2.5
2.0
1.6
1.2
0.8
0.4
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0
0.03
0.03
0.01
0.05
0.05
0.02
I
Figure 10. Collector Saturation Region
C
Figure 14. Temperature Coefficients
= 2.0 A
0.1
0.1
*APPLIES FOR I
0.05
V
qV
V
V
*qV
Figure 12. “On” Voltages
BE(sat)
I
I
CE(sat)
BE(on)
0.3
C
0.3
C
B
, COLLECTOR CURRENT (AMP)
, COLLECTOR CURRENT (AMP)
5.0 A
C
for V
I
B
for V
0.1
, BASE CURRENT (AMP)
@ I
T
@ V
@ I
J
BE(sat)
0.5
0.5
= −55°C to +175°C
CE(sat)
C
C
C
CE
/I
/I
0.2
/I
B
B
B
= 2.0 V
= 10
= 10
<
10 A
1.0
1.0
h FE @ V CE + 2.0 V
0.5
3.0
3.0
1.0
2
20 A
5.0
5.0
2.0
T
J
T
= 25°C
J
10
10
= 25°C
5.0
30
30
10