2SK3913-01MR_05 FUJI [Fuji Electric], 2SK3913-01MR_05 Datasheet - Page 3

• Manufacturer Part Number: 2SK3913-01MR_05
• Description: N-CHANNEL SILICON POWER MOSFET
• Manufacturer: FUJI [Fuji Electric]

2SK3913-01MR
100p
10n
10p
10
10
10
10
1n
1p
7
6
5
4
3
2
1
0
3
2
1
0
10
10
-50
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250uA
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=48V,VGS=10V,RG=10
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
td(on)
-1
-1
td(off)
tr
tf
-25
10
0
0
10
VDS [V]
0
25
ID [A]
Tch [
10
50
max.
min.
1
°
C]
75
10
1
100
10
2
125
Ciss
Coss
Crss
Ω
150
10
10
3
2
100
350
300
250
200
150
100
0.1
24
20
16
12
10
50
8
4
0
1
0
0.00
0
0
Typical Gate Charge Characteristics
VGS=f(Qg):ID=14A,Tch=25
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=48V,I(AV)<=14A
I
I
I
AS
AS
AS
=5.6A
=8.4A
=14A
10
0.25
25
20
0.50
50
starting Tch [
μ
200V
FUJI POWER MOSFET
s pulse test,Tch=25
30
Qg [nC]
Vcc= 50V
250V
VSD [V]
0.75
75
40
°
C]
1.00
100
50
°
C
1.25
125
60
°
C
1.50
150
70
3