2SK3913-01MR_05 FUJI [Fuji Electric], 2SK3913-01MR_05 Datasheet - Page 2

• Manufacturer Part Number: 2SK3913-01MR_05
• Description: N-CHANNEL SILICON POWER MOSFET
• Manufacturer: FUJI [Fuji Electric]

2SK3913-01MR
Characteristics
0.01
0.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
40
35
30
25
20
15
10
10
1
5
0
0
0
0
Typical Transfer Characteristic
ID=f(VGS):80
Allowable Power Dissipation
PD=f(Tc)
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
1
5
25
2
VGS=6.5V
10
3
50
μ
VGS[V]
4
s pulse test,VDS=25V,Tch=25
15
Tc [
ID [A]
7.0V
75
5
μ
°
s pulse test,Tch=25
C]
20
6
100
7.5V
7
25
8
125
8V
30
10V
9
20V
150
10
35
°
C
°
C
100
0.1
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
35
30
25
20
15
10
5
0
1
0.1
0
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=7A,VGS=10V
Typical Output Characteristics
ID=f(VDS):80
-50
Typical Transconductance
gfs=f(ID):80
2
-25
4
0
FUJI POWER MOSFET
1
μ
s pulse test,VDS=25V,Tch=25
μ
6
25
Tch [
s pulse test,Tch=25
VDS [V]
ID [A]
°
8
50
max.
C]
10
75
10
typ.
100
12
VGS=6V
125
14
7V
°
8V
6.5V
20V
10V
C
100
150
16
°
C
2