2SK3700_09 TOSHIBA [Toshiba Semiconductor], 2SK3700_09 Datasheet

2SK3700_09

Manufacturer Part Number

2SK3700_09

Description

Switching Regulator Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK3700_09.pdf (6 pages)

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Switching Regulator Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Low drain-source ON-resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement model: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (Tc=25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the temperature does not exceed 150℃.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device. Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ)

= 90 V, T

Pulse (Note 1)

DSS

= 20 kΩ)

= 2.0 to 4.0 V (V

= 25°C (initial), L = 25.7mH, R

= 100 μA (max) (V

(Note 1)

(Note 2)

DS (ON)

(Ta = 25°C)

| = 4.5 S (typ.)

Symbol

DGR

DSS

GSS

stg

2SK3700

Symbol

th (ch-a)

th (ch-c)

= 2.0 Ω (typ.)

= 10 V, I

= 720 V)

−55 to150

Rating

900

±30

150

351

150

= 1 mA)

0.833

Max

= 25 Ω, I

Unit

°C/W

°C

Unit

= 5 A

Weight: 4.6 g (typ.)

JEDEC

JEITA

TOSHIBA

1. GATE

2. DRAIN (HEAT SINK)

3. SOURCE

2-16C1B

2009-09-29

―

2SK3700

Unit: mm

Related parts for 2SK3700_09

2SK3700_09 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) Switching Regulator Applications • Low drain-source ON-resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (max) (V DSS • Enhancement model ...

Page 2

Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time ...

Page 3

I – Common source 25°C 10 Pulse Test 4 Drain-source voltage V DS (V) I – V ...

Page 4

R – (ON) 10 COMMON SOURCE PULSE TEST 1 −80 − CASE TEMPERATURE Tc (°C) CAPACITANCE – 10000 1000 ...

Page 5

Duty=0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 0.01 0.001 10μ 100μ SAFE OPERATING AREA 100 I D max (PULSED) * 100 μ max (CONTINUOUS OPERATION 1 Tc ...

Page 6

RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...

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