2sk3700 TOSHIBA Semiconductor CORPORATION, 2sk3700 Datasheet
2sk3700
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2sk3700 Summary of contents
Page 1
... 150 °C ch −55 to150 T °C stg Symbol Max Unit R 0.833 °C/W th (ch- °C/W th (ch- Ω 2SK3700 Unit GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ― JEITA ― TOSHIBA 2-16C1B Weight: 4.6 g (typ.) 2006-11-13 ...
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... Test Condition I ⎯ DR ⎯ I DRP = DSF /dt = 100 A/μ 2SK3700 Min Typ. Max ⎯ ⎯ ±10 ±30 ― ― ⎯ ⎯ 100 ⎯ ⎯ 900 ⎯ 2.0 4.0 ⎯ 2.0 2.5 ⎯ 2.0 4.5 ⎯ ⎯ 1150 ⎯ ...
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... Pulse Test 4. Drain-source voltage Gate-source voltage 0.01 3 2SK3700 I – 5.5 5. (V) V – Common source Tc = 25°C Pulse Test 1 ...
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... PULSE TEST 0 −80 − 100 (V) CASE TEMPERATURE Tc (°C) DS 500 400 300 200 100 0 0 160 200 TOTAL GATE CHARGE Q 4 2SK3700 I – 25° − −0.4 −0.8 −1.2 −1.6 ( – 120 ...
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... PULSE WIDTH t (s) w 500 400 300 200 100 10000 CHANNEL TEMPERATURE (INITIAL) ( −15 V TEST CIRCUIT = 25 Ω 25.7mH 2SK3700 Duty = t (ch-c) = 1.25°C – 100 125 150 T (° VDSS ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK3700 20070701-EN 2006-11-13 ...