2SK360IGFTL RENESAS [Renesas Technology Corp], 2SK360IGFTL Datasheet - Page 3

• Manufacturer Part Number: 2SK360IGFTL
• Description: Silicon N-Channel MOS FET
• Manufacturer: RENESAS [Renesas Technology Corp]

2SK360
Rev.2.00, Aug 10.2005, page 3 of 5
10.0
150
100
100
8.0
6.0
4.0
2.0
50
50
20
10
0
5
2
1
0
–2.0
0.2
V
Maximum Channel Dissipation Curve
DS
Gate to Source Voltage V
Forward Transfer Admittance vs.
Typical Transfer Characteristics
Ambient Temperature Ta (°C)
= 10 V
–1.6
0.5
Drain Current I
50
1.0
Drain Current
–1.2
2
–0.8
D
100
V
f = 1 kHz
DS
(mA)
5
= 10 V
E
F
GS
–0.4
10
(V)
150
20
0
1.0
0.5
10
20
16
12
20
10
8
6
4
2
0
8
4
0
5
2
0.5
Drain to Source Voltage V
Drain to Source Voltage V
Drain to Source Voltage V
Forward Transfer Admittance vs.
Typical Output Characteristics
1.0
Drain to Source Voltage
2
2
Drain to Source Voltage
Input Capacitance vs.
2
4
4
6
6
5
V
f = 1 kHz
V
f = 1 MHz
GS
DS
GS
DS
DS
8
10
8
= 0
= 0
(V)
(V)
(V)
10
10
20